Regular patterning of PS substrates by a self-assembled mask

N. Nagy, A. E. Pap, A. Deák, J. Volk, E. Horváth, Z. Hórvölgyi, I. Bársony

Research output: Contribution to journalConference article

Abstract

Regularly ordered porous structures were fabricated in ion-implanted p- and n-type silicon. Mono-layered Langmuir-Blodgett (LB) films and a double-layered film from Stöber silica spheres of 350 nm diameter were used as masking layers in the boron and phosphorus ion-implantation step, providing the laterally periodic doping structure. The various ordered porous structures are obtained after the anodic etch process. The PS layer can be removed by alkaline etching. The masking LB silica layer and the resulting structures are shown in the SEM images. Using the self-assembled nanoparticles, regular patterns of high resolution can easily be prepared in an inexpensive manner on large area silicon.

Original languageEnglish
Pages (from-to)2021-2025
Number of pages5
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume4
Issue number6
DOIs
Publication statusPublished - Dec 1 2007
Event14th Applied Surface Analysis Workshop, AOFA 14 - Kaiserslautern, Germany
Duration: Sep 17 2006Sep 20 2006

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ASJC Scopus subject areas

  • Condensed Matter Physics

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