Regularly ordered porous structures were fabricated in ion-implanted p- and n-type silicon. Mono-layered Langmuir-Blodgett (LB) films and a double-layered film from Stöber silica spheres of 350 nm diameter were used as masking layers in the boron and phosphorus ion-implantation step, providing the laterally periodic doping structure. The various ordered porous structures are obtained after the anodic etch process. The PS layer can be removed by alkaline etching. The masking LB silica layer and the resulting structures are shown in the SEM images. Using the self-assembled nanoparticles, regular patterns of high resolution can easily be prepared in an inexpensive manner on large area silicon.
|Number of pages||5|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Dec 1 2007|
|Event||14th Applied Surface Analysis Workshop, AOFA 14 - Kaiserslautern, Germany|
Duration: Sep 17 2006 → Sep 20 2006
ASJC Scopus subject areas
- Condensed Matter Physics