Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing

E. Belas, J. Franc, R. Grill, A. L. Toth, P. Horodysky, P. Moravec, P. Höschl

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The kinetics of the p-to-n conversion and effect of the anomalous n-to-p reconversion of p-CdTe during annealing at 400-700°C under Cd-rich overpressure have been investigated. The p-to-n conversion is related to diffusion of Cd interstitials together with gettering of foreign fast diffusing acceptors to the center of the sample. The propagation of the n-type layer during annealing at 500°C was found to be significantly slower then the standard square-root dependence on annealing time. The anomalous n-to-p reconversion of the converted n-type sample was observed after sufficient long time annealing at 600°C.

Original languageEnglish
Pages (from-to)957-962
Number of pages6
JournalJournal of Electronic Materials
Volume34
Issue number6
DOIs
Publication statusPublished - Jun 2005

Keywords

  • Annealing
  • CdTe
  • Diffusion
  • Photoluminescence
  • p-n junction formation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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