Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing

E. Belas, J. Franc, R. Grill, A. Tóth, P. Horodysky, P. Moravec, P. Höschl

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The kinetics of the p-to-n conversion and effect of the anomalous n-to-p reconversion of p-CdTe during annealing at 400-700°C under Cd-rich overpressure have been investigated. The p-to-n conversion is related to diffusion of Cd interstitials together with gettering of foreign fast diffusing acceptors to the center of the sample. The propagation of the n-type layer during annealing at 500°C was found to be significantly slower then the standard square-root dependence on annealing time. The anomalous n-to-p reconversion of the converted n-type sample was observed after sufficient long time annealing at 600°C.

Original languageEnglish
Pages (from-to)957-962
Number of pages6
JournalJournal of Electronic Materials
Volume34
Issue number6
Publication statusPublished - Jun 2005

Fingerprint

Annealing
annealing
overpressure
interstitials
Kinetics
propagation
kinetics

Keywords

  • Annealing
  • CdTe
  • Diffusion
  • p-n junction formation
  • Photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Belas, E., Franc, J., Grill, R., Tóth, A., Horodysky, P., Moravec, P., & Höschl, P. (2005). Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing. Journal of Electronic Materials, 34(6), 957-962.

Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing. / Belas, E.; Franc, J.; Grill, R.; Tóth, A.; Horodysky, P.; Moravec, P.; Höschl, P.

In: Journal of Electronic Materials, Vol. 34, No. 6, 06.2005, p. 957-962.

Research output: Contribution to journalArticle

Belas, E, Franc, J, Grill, R, Tóth, A, Horodysky, P, Moravec, P & Höschl, P 2005, 'Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing', Journal of Electronic Materials, vol. 34, no. 6, pp. 957-962.
Belas E, Franc J, Grill R, Tóth A, Horodysky P, Moravec P et al. Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing. Journal of Electronic Materials. 2005 Jun;34(6):957-962.
Belas, E. ; Franc, J. ; Grill, R. ; Tóth, A. ; Horodysky, P. ; Moravec, P. ; Höschl, P. / Regular and anomalous-type conversion of p-CdTe during Cd-rich annealing. In: Journal of Electronic Materials. 2005 ; Vol. 34, No. 6. pp. 957-962.
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AU - Moravec, P.

AU - Höschl, P.

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