Reduction of hydrogen induced losses in PECVD-SiOxNy optical waveguides in the near infrared

H. Albers, L. T.H. Hilderink, E. Szilagyi, F. Paszti, P. V. Lambeck, Th J.A. Popma

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

The hydrogen in PECVD-SiOxNy is studied with IR spectroscopy and ERD analysis as function of the O/N ratio and the annealing treatment up to 1150°C. The results are compared with measured spectral waveguide losses. The results show that low loss PECVD-SiOxNy waveguides for use in telecommunication applications are possible in spite of the high initial hydrogen concentration in these films.

Original languageEnglish
Pages (from-to)88-89
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2
Publication statusPublished - Dec 1 1995
EventProceedings of the 1995 8th Annual Meeting of the IEEE Lasers and Electro-Optics Society. Part 1 (of 2) - San Francisco, CA, USA
Duration: Oct 30 1995Nov 2 1995

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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