Realization of vertical and zigzag single crystalline silicon nanowire architectures

V. A. Sivakov, G. Brönstrup, B. Pécz, A. Berger, G. Z. Radnoczi, M. Krause, S. H. Christiansen

Research output: Contribution to journalArticle

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Abstract

Silicon nanowire (SiNW) ensembles with vertical and zigzag architectures have been realized using wet chemical etching of bulk silicon wafers (p-Si(111) and p-Si(100)) with a mask of silver nanoparticles that are deposited by wet electroless deposition. The etching of SiNWs is based on subsequent treatments in chemical solutions such as 0.02 M aqueous solutions of silver nitrate (AgNO3) followed by 5 M hydrofluoric acid and 30% hydrogen peroxide (H2O2). The etching of the Si wafers is mediated by the reduction of silver on the silicon surface and in parallel by the oxidation of Si thereby forming SiO2 which is dissolved in the HF surroundings. The morphology of the starting silver (Ag) layer/Ag nanoparticles that form during processing on the Si wafer surfaces strongly influences the morphology of the SiNW ensembles and homogeneity of the etch profile. Our observations suggest that the Ag layer/Ag nanoparticles not only catalyze the wet chemical etching of silicon but also strongly catalyze the decomposition of H 2O2so that the temperature of the etching solution substantially increases (strong exothermic reaction) and thus the etching velocity of bulk material. The morphology and microstructure of single crystalline SiNWs with respect to their crystallographic orientation was investigated by scanning (SEM) and transmission electron (TEM) microscopies and by electron backscatter diffraction (EBSD) in an SEM. Straight SiNWs as well as zigzag SiNWs can be realized depending on processing peculiarities. The optical characteristics such as absorption, transmission, and reflectance of the different silicon 1D architectures were investigated in an integrating sphere. Strong absorption and less reflection of visible and near-infrared light by the SiNW ensembles suggest that such material can be applied in the fields of opto-electronics, photonics and photovoltaics.

Original languageEnglish
Pages (from-to)3798-3803
Number of pages6
JournalJournal of Physical Chemistry C
Volume114
Issue number9
DOIs
Publication statusPublished - Mar 11 2010

Fingerprint

Silicon
Nanowires
nanowires
Crystalline materials
etching
Etching
Silver
silicon
Wet etching
Nanoparticles
silver
wafers
nanoparticles
Hydrofluoric Acid
Silver Nitrate
Scanning electron microscopy
Hydrofluoric acid
Exothermic reactions
Electroless plating
electroless deposition

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

Cite this

Sivakov, V. A., Brönstrup, G., Pécz, B., Berger, A., Radnoczi, G. Z., Krause, M., & Christiansen, S. H. (2010). Realization of vertical and zigzag single crystalline silicon nanowire architectures. Journal of Physical Chemistry C, 114(9), 3798-3803. https://doi.org/10.1021/jp909946x

Realization of vertical and zigzag single crystalline silicon nanowire architectures. / Sivakov, V. A.; Brönstrup, G.; Pécz, B.; Berger, A.; Radnoczi, G. Z.; Krause, M.; Christiansen, S. H.

In: Journal of Physical Chemistry C, Vol. 114, No. 9, 11.03.2010, p. 3798-3803.

Research output: Contribution to journalArticle

Sivakov, VA, Brönstrup, G, Pécz, B, Berger, A, Radnoczi, GZ, Krause, M & Christiansen, SH 2010, 'Realization of vertical and zigzag single crystalline silicon nanowire architectures', Journal of Physical Chemistry C, vol. 114, no. 9, pp. 3798-3803. https://doi.org/10.1021/jp909946x
Sivakov, V. A. ; Brönstrup, G. ; Pécz, B. ; Berger, A. ; Radnoczi, G. Z. ; Krause, M. ; Christiansen, S. H. / Realization of vertical and zigzag single crystalline silicon nanowire architectures. In: Journal of Physical Chemistry C. 2010 ; Vol. 114, No. 9. pp. 3798-3803.
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