Reactive pulsed laser deposition of thin molybdenum- and tungsten-nitride films

M. Bereznai, Z. Tóth, A. P. Caricato, M. Fernández, A. Luches, G. Majni, P. Mengucci, P. M. Nagy, A. Juhász, L. Nánai

Research output: Contribution to journalArticle

37 Citations (Scopus)


In this work reactive pulsed laser deposition of molybdenum- and tungsten-nitride thin films is investigated. Metallic targets were ablated in low-pressure (1, 10 and 100 Pa) nitrogen atmosphere by KrF excimer laser pulses (fluence ∼6.5 J/cm2). Films were deposited on silicon wafers heated to ∼25, 250 and 500°C. The characteristics of the films strongly depend on the N2 pressure. By increasing N2 pressure, the nitrogen content increases in the films, which leads to a monotonous increase of the electrical resistivity. Deposition rate decreases at 100 Pa as indicated by Rutherford backscattering spectrometry. At this pressure, hardness of the films significantly decreases also, as shown by microhardness measurements. X-ray diffractometry shows that films crystallinity is improved by increasing the substrate temperature. In addition, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were applied for visualising the film surface.

Original languageEnglish
Pages (from-to)16-23
Number of pages8
JournalThin Solid Films
Issue number1
Publication statusPublished - Feb 1 2005


  • Laser ablation
  • Molybdenum nitride
  • Physical vapour deposition
  • Tungsten nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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