Reactive ion milling-thinning of compound semiconductors

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The different reactive ion milling techniques used for the preparation of specimens for transmission electron microscopy are discussed. The most important III-V and II-VI compound semiconductors can be thinned by ion milling. In the cases of In containing semiconductors and CdTe the iodine treatment is very efficient. A simple method to prepare artefact free sample surfaces is shown by the examples of InP samples. Sample cooling is not needed in our procedure.

Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalVacuum
Volume45
Issue number1
DOIs
Publication statusPublished - Jan 1994

    Fingerprint

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this