Reactive diffusion in the GaSb-Co system at 500°C

A. A. Kodentsov, S. L. Markovski, C. Cserháti, F. J.J. Van Loo

Research output: Contribution to journalArticle

1 Citation (Scopus)


The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples.

Original languageEnglish
Pages (from-to)1619-1624
Number of pages6
JournalDefect and Diffusion Forum
Issue number194-199 PART 2
Publication statusPublished - Jan 1 2001



  • Cobalt
  • Gallium Antimonide
  • Intrinsic Diffusion
  • Potential Diagram

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Kodentsov, A. A., Markovski, S. L., Cserháti, C., & Van Loo, F. J. J. (2001). Reactive diffusion in the GaSb-Co system at 500°C. Defect and Diffusion Forum, (194-199 PART 2), 1619-1624.