Reactive diffusion in the GaSb-Co system at 500°C

A. A. Kodentsov, S. L. Markovski, C. Cserháti, F. J J Van Loo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The utility of potential diagrams in predicting the reaction zone morphology developed between a III-V compound semiconductor and a metal is exemplified by the interactions in the GaSb-Co system. A number of experiments were designed to test the model. These are aimed at determining phase equilibria in the Ga-Sb-Co system and studying the microstructural evolution of the reaction zone in bulk as well as thin-film diffusion couples.

Original languageEnglish
Pages (from-to)1619-1624
Number of pages6
JournalDefect and Diffusion Forum
Issue number194-199 PART 2
Publication statusPublished - 2001

Fingerprint

Microstructural evolution
Phase equilibria
Metals
Thin films
Experiments
diagrams
thin films
metals
interactions
III-V semiconductors

Keywords

  • Cobalt
  • Gallium Antimonide
  • Intrinsic Diffusion
  • Potential Diagram

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

Kodentsov, A. A., Markovski, S. L., Cserháti, C., & Van Loo, F. J. J. (2001). Reactive diffusion in the GaSb-Co system at 500°C. Defect and Diffusion Forum, (194-199 PART 2), 1619-1624.

Reactive diffusion in the GaSb-Co system at 500°C. / Kodentsov, A. A.; Markovski, S. L.; Cserháti, C.; Van Loo, F. J J.

In: Defect and Diffusion Forum, No. 194-199 PART 2, 2001, p. 1619-1624.

Research output: Contribution to journalArticle

Kodentsov, AA, Markovski, SL, Cserháti, C & Van Loo, FJJ 2001, 'Reactive diffusion in the GaSb-Co system at 500°C', Defect and Diffusion Forum, no. 194-199 PART 2, pp. 1619-1624.
Kodentsov AA, Markovski SL, Cserháti C, Van Loo FJJ. Reactive diffusion in the GaSb-Co system at 500°C. Defect and Diffusion Forum. 2001;(194-199 PART 2):1619-1624.
Kodentsov, A. A. ; Markovski, S. L. ; Cserháti, C. ; Van Loo, F. J J. / Reactive diffusion in the GaSb-Co system at 500°C. In: Defect and Diffusion Forum. 2001 ; No. 194-199 PART 2. pp. 1619-1624.
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