RBS characterization of porous silicon multilayer interference filters

V. Torres-Costa, F. Pászti, A. Climent-Font, R. J. Martín-Palma, J. M. Martínez-Duart

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Porous silicon (PS) has great potential in optical applications due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in optoelectronics. In the present work, Rutherford backscattering spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks consisting of alternate low-porosity/high-porosity layers to determine their compositional profile, homogeneity, and overall optical behavior. In addition, RBS has been used for the first time to determine the porosity profile of this kind of structures. The experimental results show a constant indepth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity nor oxidation degree gradient were observed.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2004

Fingerprint

Porous silicon
Rutherford backscattering spectroscopy
porous silicon
backscattering
Multilayers
Porosity
porosity
interference
filters
spectroscopy
laminates
homogeneity
Refractive index
refractivity
profiles
Optoelectronic devices
Oxidation
gradients
oxidation
Chemical analysis

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

RBS characterization of porous silicon multilayer interference filters. / Torres-Costa, V.; Pászti, F.; Climent-Font, A.; Martín-Palma, R. J.; Martínez-Duart, J. M.

In: Electrochemical and Solid-State Letters, Vol. 7, No. 11, 2004.

Research output: Contribution to journalArticle

Torres-Costa, V. ; Pászti, F. ; Climent-Font, A. ; Martín-Palma, R. J. ; Martínez-Duart, J. M. / RBS characterization of porous silicon multilayer interference filters. In: Electrochemical and Solid-State Letters. 2004 ; Vol. 7, No. 11.
@article{eead822894a744898bef67816e4b3c18,
title = "RBS characterization of porous silicon multilayer interference filters",
abstract = "Porous silicon (PS) has great potential in optical applications due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in optoelectronics. In the present work, Rutherford backscattering spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks consisting of alternate low-porosity/high-porosity layers to determine their compositional profile, homogeneity, and overall optical behavior. In addition, RBS has been used for the first time to determine the porosity profile of this kind of structures. The experimental results show a constant indepth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity nor oxidation degree gradient were observed.",
author = "V. Torres-Costa and F. P{\'a}szti and A. Climent-Font and Mart{\'i}n-Palma, {R. J.} and Mart{\'i}nez-Duart, {J. M.}",
year = "2004",
doi = "10.1149/1.1803052",
language = "English",
volume = "7",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

TY - JOUR

T1 - RBS characterization of porous silicon multilayer interference filters

AU - Torres-Costa, V.

AU - Pászti, F.

AU - Climent-Font, A.

AU - Martín-Palma, R. J.

AU - Martínez-Duart, J. M.

PY - 2004

Y1 - 2004

N2 - Porous silicon (PS) has great potential in optical applications due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in optoelectronics. In the present work, Rutherford backscattering spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks consisting of alternate low-porosity/high-porosity layers to determine their compositional profile, homogeneity, and overall optical behavior. In addition, RBS has been used for the first time to determine the porosity profile of this kind of structures. The experimental results show a constant indepth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity nor oxidation degree gradient were observed.

AB - Porous silicon (PS) has great potential in optical applications due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in optoelectronics. In the present work, Rutherford backscattering spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks consisting of alternate low-porosity/high-porosity layers to determine their compositional profile, homogeneity, and overall optical behavior. In addition, RBS has been used for the first time to determine the porosity profile of this kind of structures. The experimental results show a constant indepth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity nor oxidation degree gradient were observed.

UR - http://www.scopus.com/inward/record.url?scp=10044295073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10044295073&partnerID=8YFLogxK

U2 - 10.1149/1.1803052

DO - 10.1149/1.1803052

M3 - Article

AN - SCOPUS:10044295073

VL - 7

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 11

ER -