Raspryedyelyeniye nosityelyei{cyrillic, short} zaryada v lyuminoforakh ZnS pri sil{cyrillic small soft sign}no nyeodnorodnom vozBuzhdyenii

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Abstract

An analysis is given of the distribution and ambipolar diffusion of carriers generated by strongly absorbed radiation (photons and electrons) in ZnS phosphors. In the analysis a three-step successive approximation is used, making use of the Klasens method, assuming neutrality condition and considering space charge effects. The distribution of carriers is calculated considering diffusion, bulk and surface recombination and space charge effects. The effective ambipolar diffusion is a result of space charge accumulated in traps, attracting holes and retarding electrons, preventing the carriers to reach traps located deeper in the bulk and balancing their diffusion current. The negative space charge layer has to be compensated by a positive layer. Some experimental aspects are discussed.

Original languageEnglish
Pages (from-to)273-282
Number of pages10
JournalActa Physica Academiae Scientiarum Hungaricae
Volume14
Issue number2-3
DOIs
Publication statusPublished - Apr 1962

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space charge
ambipolar diffusion
traps
phosphors
electrons
retarding
photons
radiation
approximation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Cite this

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title = "Raspryedyelyeniye nosityelyei{cyrillic, short} zaryada v lyuminoforakh ZnS pri sil{cyrillic small soft sign}no nyeodnorodnom vozBuzhdyenii",
abstract = "An analysis is given of the distribution and ambipolar diffusion of carriers generated by strongly absorbed radiation (photons and electrons) in ZnS phosphors. In the analysis a three-step successive approximation is used, making use of the Klasens method, assuming neutrality condition and considering space charge effects. The distribution of carriers is calculated considering diffusion, bulk and surface recombination and space charge effects. The effective ambipolar diffusion is a result of space charge accumulated in traps, attracting holes and retarding electrons, preventing the carriers to reach traps located deeper in the bulk and balancing their diffusion current. The negative space charge layer has to be compensated by a positive layer. Some experimental aspects are discussed.",
author = "G. Gergely",
year = "1962",
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doi = "10.1007/BF03158567",
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journal = "Acta Physica Academiae Scientiarum Hungaricae",
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PY - 1962/4

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N2 - An analysis is given of the distribution and ambipolar diffusion of carriers generated by strongly absorbed radiation (photons and electrons) in ZnS phosphors. In the analysis a three-step successive approximation is used, making use of the Klasens method, assuming neutrality condition and considering space charge effects. The distribution of carriers is calculated considering diffusion, bulk and surface recombination and space charge effects. The effective ambipolar diffusion is a result of space charge accumulated in traps, attracting holes and retarding electrons, preventing the carriers to reach traps located deeper in the bulk and balancing their diffusion current. The negative space charge layer has to be compensated by a positive layer. Some experimental aspects are discussed.

AB - An analysis is given of the distribution and ambipolar diffusion of carriers generated by strongly absorbed radiation (photons and electrons) in ZnS phosphors. In the analysis a three-step successive approximation is used, making use of the Klasens method, assuming neutrality condition and considering space charge effects. The distribution of carriers is calculated considering diffusion, bulk and surface recombination and space charge effects. The effective ambipolar diffusion is a result of space charge accumulated in traps, attracting holes and retarding electrons, preventing the carriers to reach traps located deeper in the bulk and balancing their diffusion current. The negative space charge layer has to be compensated by a positive layer. Some experimental aspects are discussed.

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