Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction

Jos G E Klappe, I. Bársony, Pierre H. Woerlee, Tom W. Ryan, P. Alkemade

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, low-energy (45 keV) implantations of phosphorous and boron into silicon were studied. A comparison of doping profiles, secondary defect formation, electrical activation and diode leakage was made between Rapid Thermal Annealing (RTA) and conventional furnace annealing. The samples were analysed by High-Resolution X-Ray Diffraction (HR-XRD), X-TEM, SIMS, spreading resistance (SRP) and sheet resistance measurements. The non-destructive HR-XRD technique combined with the novel simulation software was a very useful tool for the defect characterisation and for the choice of the optimum annealing temperature. Furthermore estimations of electrically active dopant atoms were made with HR-XRD by measurement of the strain. With RTA a substitutional dopant concentration of a factor 2 to 4 higher than with furnace annealing can be obtained, for P and B respectively. Electrical measurements show that not all of the substitutional dopants are electrically active, however. Thus estimates of the electrically active dopant atoms with HR-XRD require further study. Furthermore it appeared that RTA was superior to furnace anneal for lowering sheet resistances, defect removal and dopant profile broadening. However, furnace anneal gave the best results for diode leakage currents. This indicates that RTA processing needs to be further refined or that combined RTA/furnace processes need to be developed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages363-368
Number of pages6
Volume342
Publication statusPublished - 1994
EventProceedings of the 1994 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
Duration: Apr 4 1994Apr 7 1994

Other

OtherProceedings of the 1994 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period4/4/944/7/94

Fingerprint

Rapid thermal annealing
Silicon
Diffraction
Doping (additives)
Furnaces
X rays
X ray diffraction
Sheet resistance
Annealing
Defects
Diodes
Atoms
Boron
Secondary ion mass spectrometry
Leakage currents
Chemical activation
Transmission electron microscopy
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Klappe, J. G. E., Bársony, I., Woerlee, P. H., Ryan, T. W., & Alkemade, P. (1994). Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction. In Materials Research Society Symposium - Proceedings (Vol. 342, pp. 363-368). Materials Research Society.

Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction. / Klappe, Jos G E; Bársony, I.; Woerlee, Pierre H.; Ryan, Tom W.; Alkemade, P.

Materials Research Society Symposium - Proceedings. Vol. 342 Materials Research Society, 1994. p. 363-368.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Klappe, JGE, Bársony, I, Woerlee, PH, Ryan, TW & Alkemade, P 1994, Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction. in Materials Research Society Symposium - Proceedings. vol. 342, Materials Research Society, pp. 363-368, Proceedings of the 1994 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/4/94.
Klappe JGE, Bársony I, Woerlee PH, Ryan TW, Alkemade P. Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction. In Materials Research Society Symposium - Proceedings. Vol. 342. Materials Research Society. 1994. p. 363-368
Klappe, Jos G E ; Bársony, I. ; Woerlee, Pierre H. ; Ryan, Tom W. ; Alkemade, P. / Rapid thermal annealing of low-energy P and B implants in silicon, optimized by high resolution x-ray diffraction. Materials Research Society Symposium - Proceedings. Vol. 342 Materials Research Society, 1994. pp. 363-368
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