Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates

E. Gombia, R. Mosca, A. Motta, H. Chaabane, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Al Schottky barriers have been prepared on n-In0.35Ga0.65As/buffer/GaAs structures using InxGa1-xAs buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga0.65As layer. Counter doped p+ cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67eV and ideality factors of 1.15 have been obtained.

Original languageEnglish
Pages (from-to)2283-2285
Number of pages3
JournalElectronics Letters
Volume32
Issue number24
Publication statusPublished - 1996

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Lattice mismatch
Defect density
Epitaxial layers
Substrates

Keywords

  • Gallium arsenide
  • Indium compounds
  • Schottky barriers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Gombia, E., Mosca, R., Motta, A., Chaabane, H., Bosacchi, A., & Franchi, S. (1996). Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates. Electronics Letters, 32(24), 2283-2285.

Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates. / Gombia, E.; Mosca, R.; Motta, A.; Chaabane, H.; Bosacchi, A.; Franchi, S.

In: Electronics Letters, Vol. 32, No. 24, 1996, p. 2283-2285.

Research output: Contribution to journalArticle

Gombia, E, Mosca, R, Motta, A, Chaabane, H, Bosacchi, A & Franchi, S 1996, 'Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates', Electronics Letters, vol. 32, no. 24, pp. 2283-2285.
Gombia, E. ; Mosca, R. ; Motta, A. ; Chaabane, H. ; Bosacchi, A. ; Franchi, S. / Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates. In: Electronics Letters. 1996 ; Vol. 32, No. 24. pp. 2283-2285.
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