Quantum effects associated with misfit dislocations in GaAs-based heterostructures

T. Wosiński, T. Figielski, A. Mkosa, W. Dobrowolski, O. Pelya, B. Pécz

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Quantum effects characteristic of mesoscopic systems have been revealed in a study of vertical electron transport through GaAs-based heterostructures with a small lattice mismatch. At low temperatures and under strong magnetic field applied parallel to the axes of misfit dislocations generated at the interface, they manifest themselves as regular conductance fluctuations, appearing as a function of applied voltage and magnetic field. We interpret these fluctuations as being caused by trapping of charge carriers on quasi-stationary orbits, formed around the charged dislocations.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume91-92
DOIs
Publication statusPublished - Apr 30 2002

Keywords

  • Heterostructures
  • Misfit dislocations
  • Quantum effects
  • Semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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