Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime

Juan Gómez-Pérez, Balázs Barna, Ildikó Y. Tóth, Z. Kónya, Á. Kukovecz

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Previous theoretical reports have described the oxidation of few-layer black phosphorus and its effects on the electronic properties. Theoretically, native oxide layers bring opportunities for band gap engineering, but the detection of the different types of oxides is still a challenge at the experimental level. In this work, we uncover a correlation between thermal processes and Raman shift for the Ag1, B2g, and Ag2 vibrational modes. The thermal expansion coefficients (temperature range, 290-485 K) for the Ag1, B2g, and Ag2 were -0.015, -0.027, and -0.028 cm-1 K-1, respectively. Differential scanning calorimetry analysis shows an endothermic process centered at 528 K, and it was related with a mass increase according to thermogravimetric analysis. Raman shift temperature dependence was correlated to theoretical lattice thermal expansion, and a significant deviation was detected in the stacking direction at 500 K.

Original languageEnglish
Pages (from-to)12482-12488
Number of pages7
JournalACS Omega
Volume3
Issue number10
DOIs
Publication statusPublished - Oct 31 2018

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Phosphorus
Oxides
Thermal expansion
Oxidation
Electronic properties
Thermogravimetric analysis
Differential scanning calorimetry
Energy gap
Temperature
Hot Temperature
Direction compound

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

Cite this

Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime. / Gómez-Pérez, Juan; Barna, Balázs; Tóth, Ildikó Y.; Kónya, Z.; Kukovecz, Á.

In: ACS Omega, Vol. 3, No. 10, 31.10.2018, p. 12482-12488.

Research output: Contribution to journalArticle

Gómez-Pérez, Juan ; Barna, Balázs ; Tóth, Ildikó Y. ; Kónya, Z. ; Kukovecz, Á. / Quantitative Tracking of the Oxidation of Black Phosphorus in the Few-Layer Regime. In: ACS Omega. 2018 ; Vol. 3, No. 10. pp. 12482-12488.
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