Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

M. N. Drozdov, Y. N. Drozdov, A. Csík, A. V. Novikov, K. Vad, P. A. Yunin, D. V. Yurasov, S. F. Belykh, G. P. Gololobov, D. V. Suvorov, A. Tolstogouzov

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Quantification of Ge in Si1-xGex structures (0.092 ≤ x ≤ 0.78) was carried out by time-of-flight secondary ion mass spectrometry (TOF-SIMS) and electron-gas secondary neutral mass spectrometry (SNMS). A good linear correlation (R2 > 0.9997) of the intensity ratios of secondary ions GeCs2 +/SiCs2 + and 74Ge-/30Si- and post-ionized sputtered neutrals 70Ge+/28Si+ with Ge concentration was obtained. The calibration data were used for quantitative depth profiling of [10 × (12.3 nm Si0.63Ge0.37/34 nm Si)] structures on Si. Satisfactory compliance of the quantified Ge concentration in SiGe layers with the values obtained by high-resolution X-ray diffraction was revealed for both techniques. SIMS and SNMS experimental profiles were fitted using Hofmann's mixing-roughness-information depth (MRI) model. In the case of TOF-SIMS, the quality of the reconstruction was better than for SNMS since not only the progressing roughening, but also the crater effect and other processes unaccounted in the MRI simulation could have a significant impact on plasma sputter depth profiling.

Original languageEnglish
Pages (from-to)25-31
Number of pages7
JournalThin Solid Films
Volume607
DOIs
Publication statusPublished - May 31 2016

Fingerprint

Depth profiling
Secondary ion mass spectrometry
secondary ion mass spectrometry
Mass spectrometry
mass spectroscopy
Surface roughness
Electron gas
roughness
craters
Calibration
Ions
electron gas
Plasmas
X ray diffraction
high resolution
profiles
diffraction
ions
x rays
simulation

Keywords

  • Electron-gas secondary neutral mass spectrometry (SNMS)
  • Mixing-roughness-information depth model (MRI)
  • Reference samples
  • SiGe structures
  • Sputter depth profiling
  • Time-of-flight secondary ion mass spectrometry (TOF-SIMS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry. / Drozdov, M. N.; Drozdov, Y. N.; Csík, A.; Novikov, A. V.; Vad, K.; Yunin, P. A.; Yurasov, D. V.; Belykh, S. F.; Gololobov, G. P.; Suvorov, D. V.; Tolstogouzov, A.

In: Thin Solid Films, Vol. 607, 31.05.2016, p. 25-31.

Research output: Contribution to journalArticle

Drozdov, MN, Drozdov, YN, Csík, A, Novikov, AV, Vad, K, Yunin, PA, Yurasov, DV, Belykh, SF, Gololobov, GP, Suvorov, DV & Tolstogouzov, A 2016, 'Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry', Thin Solid Films, vol. 607, pp. 25-31. https://doi.org/10.1016/j.tsf.2016.03.049
Drozdov, M. N. ; Drozdov, Y. N. ; Csík, A. ; Novikov, A. V. ; Vad, K. ; Yunin, P. A. ; Yurasov, D. V. ; Belykh, S. F. ; Gololobov, G. P. ; Suvorov, D. V. ; Tolstogouzov, A. / Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry. In: Thin Solid Films. 2016 ; Vol. 607. pp. 25-31.
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AU - Vad, K.

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