Quantitative analysis of AlxGa1-xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPS

J. Olivier, G. Padeletti, G. M. Ingo, G. Mattogno, A. Bosacchi, S. Franchi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

By means of Auger electron spectroscopy (AES) depth profiling and small area X-ray photoelectron spectroscopy (XPS), the chemical composition of the AlxGa1-xAs layer in a series of reference AlxGa1-xAs/GaAs (0.15 0.3Ga0.7As/GaAs MQW. Furthermore, the abruptness of the change in composition at the interface between Al0.30Ga0.7As and GaAs layers has been well characterized and an ultimate depth resolution of 5 nm has been achieved for a sputtering ion energy of 1 keV.

Original languageEnglish
Pages (from-to)89-93
Number of pages5
JournalApplied Surface Science
Volume70-71
Issue numberPART 1
DOIs
Publication statusPublished - Jun 2 1993

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Depth profiling
Auger electron spectroscopy
quantitative analysis
Auger spectroscopy
electron spectroscopy
X ray photoelectron spectroscopy
photoelectron spectroscopy
Chemical analysis
Sputtering
chemical composition
x rays
sputtering
Ions
ions
gallium arsenide
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Quantitative analysis of AlxGa1-xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPS. / Olivier, J.; Padeletti, G.; Ingo, G. M.; Mattogno, G.; Bosacchi, A.; Franchi, S.

In: Applied Surface Science, Vol. 70-71, No. PART 1, 02.06.1993, p. 89-93.

Research output: Contribution to journalArticle

Olivier, J. ; Padeletti, G. ; Ingo, G. M. ; Mattogno, G. ; Bosacchi, A. ; Franchi, S. / Quantitative analysis of AlxGa1-xAs/GaAs multiquantum wells by means of AES depth profiling and small area XPS. In: Applied Surface Science. 1993 ; Vol. 70-71, No. PART 1. pp. 89-93.
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