Pyramidal pit formation at the Au/GaAs interface during heat treatment

B. Pécz, E. Jároli, G. Radnóczi, R. Veresegyházy, I. Mojzes

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Au/GaAs samples are heat treated in the 400 to 450°C temperature range (in forming gas). The interdiffusion of Au and GaAs is investigated by RBS and EMP. The results reveal the enrichment of gold with gallium. Cross sectional images taken with TEM from the interface show the appearance of rectangular based pyramidal pits grown into the GaAs. Mostly these pits are Au single crystals, but in some cases the intermetallic phase of orthorhombic GaAu2 is identified.

Original languageEnglish
Pages (from-to)507-513
Number of pages7
Journalphysica status solidi (a)
Volume94
Issue number2
DOIs
Publication statusPublished - 1986

Fingerprint

Gallium
Intermetallics
heat treatment
Gold
Heat treatment
Single crystals
Transmission electron microscopy
electromagnetic pulses
Gases
gallium
intermetallics
gold
heat
Temperature
transmission electron microscopy
single crystals
gases
temperature
Hot Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Pyramidal pit formation at the Au/GaAs interface during heat treatment. / Pécz, B.; Jároli, E.; Radnóczi, G.; Veresegyházy, R.; Mojzes, I.

In: physica status solidi (a), Vol. 94, No. 2, 1986, p. 507-513.

Research output: Contribution to journalArticle

Pécz, B. ; Jároli, E. ; Radnóczi, G. ; Veresegyházy, R. ; Mojzes, I. / Pyramidal pit formation at the Au/GaAs interface during heat treatment. In: physica status solidi (a). 1986 ; Vol. 94, No. 2. pp. 507-513.
@article{ce9a0a31f1ae435799e8b1a2cf3cd581,
title = "Pyramidal pit formation at the Au/GaAs interface during heat treatment",
abstract = "Au/GaAs samples are heat treated in the 400 to 450°C temperature range (in forming gas). The interdiffusion of Au and GaAs is investigated by RBS and EMP. The results reveal the enrichment of gold with gallium. Cross sectional images taken with TEM from the interface show the appearance of rectangular based pyramidal pits grown into the GaAs. Mostly these pits are Au single crystals, but in some cases the intermetallic phase of orthorhombic GaAu2 is identified.",
author = "B. P{\'e}cz and E. J{\'a}roli and G. Radn{\'o}czi and R. Veresegyh{\'a}zy and I. Mojzes",
year = "1986",
doi = "10.1002/pssa.2210940209",
language = "English",
volume = "94",
pages = "507--513",
journal = "Physica Status Solidi (A) Applied Research",
issn = "0031-8965",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Pyramidal pit formation at the Au/GaAs interface during heat treatment

AU - Pécz, B.

AU - Jároli, E.

AU - Radnóczi, G.

AU - Veresegyházy, R.

AU - Mojzes, I.

PY - 1986

Y1 - 1986

N2 - Au/GaAs samples are heat treated in the 400 to 450°C temperature range (in forming gas). The interdiffusion of Au and GaAs is investigated by RBS and EMP. The results reveal the enrichment of gold with gallium. Cross sectional images taken with TEM from the interface show the appearance of rectangular based pyramidal pits grown into the GaAs. Mostly these pits are Au single crystals, but in some cases the intermetallic phase of orthorhombic GaAu2 is identified.

AB - Au/GaAs samples are heat treated in the 400 to 450°C temperature range (in forming gas). The interdiffusion of Au and GaAs is investigated by RBS and EMP. The results reveal the enrichment of gold with gallium. Cross sectional images taken with TEM from the interface show the appearance of rectangular based pyramidal pits grown into the GaAs. Mostly these pits are Au single crystals, but in some cases the intermetallic phase of orthorhombic GaAu2 is identified.

UR - http://www.scopus.com/inward/record.url?scp=84983857294&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84983857294&partnerID=8YFLogxK

U2 - 10.1002/pssa.2210940209

DO - 10.1002/pssa.2210940209

M3 - Article

AN - SCOPUS:84983857294

VL - 94

SP - 507

EP - 513

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

SN - 0031-8965

IS - 2

ER -