Pulsed laser synthesis and printing of compound semiconductors

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

A systematic study on ruby laser processing of supported Ge/Se bilayer structures is reported. Depending on the sequence of the initial layers and processing parameters compound synthesis, total or partial ablation of one of the constituents or the compound formed and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with one single laser pulse. The results establish a novel single step technique for local deposition of compound films with lateral dimensions down to the micrometer range from a multilayer structure on a transparent support as a source.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1022
DOIs
Publication statusPublished - Apr 10 1989
EventLaser Assisted Processing 1988 - Hamburg, Germany
Duration: Sep 19 1988Sep 23 1988

Fingerprint

Pulsed Laser
Pulsed lasers
printing
Printing
Semiconductors
pulsed lasers
Synthesis
Semiconductor materials
Laser Processing
Ruby
ruby lasers
Ablation
synthesis
Processing
laminates
Proximity
ablation
Multilayer
proximity
micrometers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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abstract = "A systematic study on ruby laser processing of supported Ge/Se bilayer structures is reported. Depending on the sequence of the initial layers and processing parameters compound synthesis, total or partial ablation of one of the constituents or the compound formed and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with one single laser pulse. The results establish a novel single step technique for local deposition of compound films with lateral dimensions down to the micrometer range from a multilayer structure on a transparent support as a source.",
author = "Tam{\'a}s Sz{\"o}r{\'e}nyi and Zsolt T{\'o}th",
year = "1989",
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AU - Szörényi, Tamás

AU - Tóth, Zsolt

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AB - A systematic study on ruby laser processing of supported Ge/Se bilayer structures is reported. Depending on the sequence of the initial layers and processing parameters compound synthesis, total or partial ablation of one of the constituents or the compound formed and simultaneous transfer of the ablated material onto a separate substrate in close proximity is possible with one single laser pulse. The results establish a novel single step technique for local deposition of compound films with lateral dimensions down to the micrometer range from a multilayer structure on a transparent support as a source.

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