Pulse response of GaAs and InP photoconductive detectors for the X-ray diagnostics of laser plasmas

F. Riesz, Leszek Ry, Jan Badziak, Miroslav Pfeifer

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for the detection of X-ray pulses from laser plasmas. Current-voltage curves, pulses from different lasers as well as pulse-height spectra measurements using light pulses are used to compare the detectors. Non-linear dependence of the response on excitation intensity is found and investigated in detail. The results are explained by carrier trapping/detrapping and recombination phenomena. The response to X-ray pulses from a picosecond laser plasma are presented as well. InP detectors were of higher performance.

Original languageEnglish
Pages (from-to)151-158
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume474
Issue number2
DOIs
Publication statusPublished - Dec 1 2001

Fingerprint

laser plasmas
Laser pulses
Detectors
Plasmas
X rays
Lasers
detectors
pulses
x rays
Light measurement
pulse amplitude
trapping
Electric potential
electric potential
curves
excitation
lasers

Keywords

  • GaAS
  • InP
  • Photoconductive detectors
  • Plasma diagnostics

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

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T1 - Pulse response of GaAs and InP photoconductive detectors for the X-ray diagnostics of laser plasmas

AU - Riesz, F.

AU - Ry, Leszek

AU - Badziak, Jan

AU - Pfeifer, Miroslav

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for the detection of X-ray pulses from laser plasmas. Current-voltage curves, pulses from different lasers as well as pulse-height spectra measurements using light pulses are used to compare the detectors. Non-linear dependence of the response on excitation intensity is found and investigated in detail. The results are explained by carrier trapping/detrapping and recombination phenomena. The response to X-ray pulses from a picosecond laser plasma are presented as well. InP detectors were of higher performance.

AB - Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for the detection of X-ray pulses from laser plasmas. Current-voltage curves, pulses from different lasers as well as pulse-height spectra measurements using light pulses are used to compare the detectors. Non-linear dependence of the response on excitation intensity is found and investigated in detail. The results are explained by carrier trapping/detrapping and recombination phenomena. The response to X-ray pulses from a picosecond laser plasma are presented as well. InP detectors were of higher performance.

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KW - InP

KW - Photoconductive detectors

KW - Plasma diagnostics

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