Protected edge states in silicene antidots and dots in magnetic field

P. Rakyta, M. Vigh, A. Csordás, J. Cserti

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Silicene systems, due to the buckled structure of the lattice, manifest remarkable intrinsic spin-orbit interaction triggering a topological phase transition in the low-energy regime. Thus, we found that protected edge states are present in silicene antidots and dots, being polarized in valley-spin pairs. We have also studied the effect of the lattice termination on the properties of the single electron energy levels and electron density distribution of silicene antidots and dots situated in a perpendicular magnetic field. Our calculations confirmed that the topological edge states are propagating over the perimeter of the antidot/dot for both ideal or realistic edge termination containing roughness on the atomic length scale. The valley polarization and the slope of the energy lines as a function of the magnetic field is, however, reduced when the antidot or dot has a rough edge.

Original languageEnglish
Article number125412
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number12
DOIs
Publication statusPublished - Mar 10 2015

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Magnetic fields
Electronic density of states
magnetic fields
Crystal lattices
Electron energy levels
valleys
Orbits
Surface roughness
Phase transitions
Polarization
spin-orbit interactions
density distribution
roughness
energy levels
electron energy
slopes
energy
polarization

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Protected edge states in silicene antidots and dots in magnetic field. / Rakyta, P.; Vigh, M.; Csordás, A.; Cserti, J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 12, 125412, 10.03.2015.

Research output: Contribution to journalArticle

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