Properties of Semipolar GaN Grown on a Si(100) Substrate

V. N. Bessolov, E. V. Konenkova, T. A. Orlova, S. Rodin, N. V. Seredova, A. V. Solomnikova, M. P. Shcheglov, D. S. Kibalov, V. K. Smirnov

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Abstract

Abstract: Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10(Formula presented.)2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10(Formula presented.)1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.

Original languageEnglish
Pages (from-to)989-992
Number of pages4
JournalSemiconductors
Volume53
Issue number7
DOIs
Publication statusPublished - Jul 1 2019

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., & Smirnov, V. K. (2019). Properties of Semipolar GaN Grown on a Si(100) Substrate. Semiconductors, 53(7), 989-992. https://doi.org/10.1134/S1063782619070054