Abstract: Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with SixNy nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10(Formula presented.)2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10(Formula presented.)1) layers with a full-width at half-maximum of the diffraction-curve of ωθ ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSFS-I1, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics