Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique

G. A. Voronin, T. W. Zerda, J. Gubicza, T. Ungár, S. N. Dub

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

A high-pressure silicon infiltration technique was applied to sinter diamond-SiC composites with different diamond crystal sizes. Composite samples were sintered at pressure 8 GPa and temperature 2170 K. The structure of composites was studied by evaluating x-ray diffraction peak profiles using Fourier coefficients of ab initio theoretical size and strain profiles. The composite samples have pronounced nanocrystalline structure: the volume-weighted mean crystallite size is 41-106 nm for the diamond phase and 17-37 nm for the SiC phase. The decrease of diamond crystal size leads to increased dislocation density in the diamond phase, lowers average crystallite sizes in both phases, decreases composite hardness, and improves fracture toughness.

Original languageEnglish
Pages (from-to)2703-2707
Number of pages5
JournalJournal of Materials Research
Volume19
Issue number9
DOIs
Publication statusPublished - Sep 2004

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Diamond
infiltration
Infiltration
Silicon carbide
silicon carbides
Diamonds
diamonds
composite materials
Composite materials
Crystallite size
nanostructure (characteristics)
Crystals
Silicon
profiles
fracture strength
Dislocations (crystals)
crystals
Fracture toughness
x ray diffraction
hardness

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Properties of nanostructured diamond-silicon carbide composites sintered by high pressure infiltration technique. / Voronin, G. A.; Zerda, T. W.; Gubicza, J.; Ungár, T.; Dub, S. N.

In: Journal of Materials Research, Vol. 19, No. 9, 09.2004, p. 2703-2707.

Research output: Contribution to journalArticle

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