Properties of CrSi2 nanocrystallites grown in a silicon matrix

N. G. Galkin, L. Dózsa, T. V. Turchin, D. L. Goroshko, B. Pécz, L. Tóth, L. Dobos, N. Q. Khanh, A. I. Cherednichenko

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy. The NCs were covered by 100 nm of epitaxial silicon. Their structure, morphology and optical properties were investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet photoelectron spectroscopy (UPS) and optical reflectance spectroscopy (ORS). The preservation of the CrSi2 phase has been justified by UPS, by ORS, and by TEM measurements. The distribution of Cr was investigated by Rutherford backscattering (RBS). The electrically active defects were investigated by deep level transient spectroscopy (DLTS). The crystal structure of the NCs nucleated near the deposition depth is identified by high-resolution TEM as hexagonal CrSi2. Energy filtered TEM shows that most of the Cr is localized in the three-dimensional (3D) NCs. RBS shows that the concentration of Cr is appropriate for the deposited quantity. In the 0.1 nm Cr sample most of the Cr is localized near the surface; in the 0.6 nm Cr sample the concentration increases at the depth of Cr deposition, while in the 1.5 nm Cr sample the excess Cr is localized near the deposition depth. DLTS Arrhenius plots give activation energies of the defects appropriate for Cr contamination, however these defects may be related to the CrSi2 NCs.

Original languageEnglish
Article number506204
JournalJournal of Physics Condensed Matter
Volume19
Issue number50
DOIs
Publication statusPublished - Dec 19 2007

Fingerprint

Nanocrystallites
Silicon
Ultraviolet photoelectron spectroscopy
transmission electron microscopy
Deep level transient spectroscopy
ultraviolet spectroscopy
Rutherford backscattering spectroscopy
silicon
matrices
Transmission electron microscopy
Defects
spectroscopy
backscattering
defects
photoelectron spectroscopy
Spectroscopy
reflectance
Arrhenius plots
High resolution transmission electron microscopy
Epitaxial growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Properties of CrSi2 nanocrystallites grown in a silicon matrix. / Galkin, N. G.; Dózsa, L.; Turchin, T. V.; Goroshko, D. L.; Pécz, B.; Tóth, L.; Dobos, L.; Khanh, N. Q.; Cherednichenko, A. I.

In: Journal of Physics Condensed Matter, Vol. 19, No. 50, 506204, 19.12.2007.

Research output: Contribution to journalArticle

Galkin, N. G. ; Dózsa, L. ; Turchin, T. V. ; Goroshko, D. L. ; Pécz, B. ; Tóth, L. ; Dobos, L. ; Khanh, N. Q. ; Cherednichenko, A. I. / Properties of CrSi2 nanocrystallites grown in a silicon matrix. In: Journal of Physics Condensed Matter. 2007 ; Vol. 19, No. 50.
@article{327f89c9708744a59fa36b23a8a4d6ec,
title = "Properties of CrSi2 nanocrystallites grown in a silicon matrix",
abstract = "Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy. The NCs were covered by 100 nm of epitaxial silicon. Their structure, morphology and optical properties were investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet photoelectron spectroscopy (UPS) and optical reflectance spectroscopy (ORS). The preservation of the CrSi2 phase has been justified by UPS, by ORS, and by TEM measurements. The distribution of Cr was investigated by Rutherford backscattering (RBS). The electrically active defects were investigated by deep level transient spectroscopy (DLTS). The crystal structure of the NCs nucleated near the deposition depth is identified by high-resolution TEM as hexagonal CrSi2. Energy filtered TEM shows that most of the Cr is localized in the three-dimensional (3D) NCs. RBS shows that the concentration of Cr is appropriate for the deposited quantity. In the 0.1 nm Cr sample most of the Cr is localized near the surface; in the 0.6 nm Cr sample the concentration increases at the depth of Cr deposition, while in the 1.5 nm Cr sample the excess Cr is localized near the deposition depth. DLTS Arrhenius plots give activation energies of the defects appropriate for Cr contamination, however these defects may be related to the CrSi2 NCs.",
author = "Galkin, {N. G.} and L. D{\'o}zsa and Turchin, {T. V.} and Goroshko, {D. L.} and B. P{\'e}cz and L. T{\'o}th and L. Dobos and Khanh, {N. Q.} and Cherednichenko, {A. I.}",
year = "2007",
month = "12",
day = "19",
doi = "10.1088/0953-8984/19/50/506204",
language = "English",
volume = "19",
journal = "Journal of Physics Condensed Matter",
issn = "0953-8984",
publisher = "IOP Publishing Ltd.",
number = "50",

}

TY - JOUR

T1 - Properties of CrSi2 nanocrystallites grown in a silicon matrix

AU - Galkin, N. G.

AU - Dózsa, L.

AU - Turchin, T. V.

AU - Goroshko, D. L.

AU - Pécz, B.

AU - Tóth, L.

AU - Dobos, L.

AU - Khanh, N. Q.

AU - Cherednichenko, A. I.

PY - 2007/12/19

Y1 - 2007/12/19

N2 - Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy. The NCs were covered by 100 nm of epitaxial silicon. Their structure, morphology and optical properties were investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet photoelectron spectroscopy (UPS) and optical reflectance spectroscopy (ORS). The preservation of the CrSi2 phase has been justified by UPS, by ORS, and by TEM measurements. The distribution of Cr was investigated by Rutherford backscattering (RBS). The electrically active defects were investigated by deep level transient spectroscopy (DLTS). The crystal structure of the NCs nucleated near the deposition depth is identified by high-resolution TEM as hexagonal CrSi2. Energy filtered TEM shows that most of the Cr is localized in the three-dimensional (3D) NCs. RBS shows that the concentration of Cr is appropriate for the deposited quantity. In the 0.1 nm Cr sample most of the Cr is localized near the surface; in the 0.6 nm Cr sample the concentration increases at the depth of Cr deposition, while in the 1.5 nm Cr sample the excess Cr is localized near the deposition depth. DLTS Arrhenius plots give activation energies of the defects appropriate for Cr contamination, however these defects may be related to the CrSi2 NCs.

AB - Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy. The NCs were covered by 100 nm of epitaxial silicon. Their structure, morphology and optical properties were investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM), ultraviolet photoelectron spectroscopy (UPS) and optical reflectance spectroscopy (ORS). The preservation of the CrSi2 phase has been justified by UPS, by ORS, and by TEM measurements. The distribution of Cr was investigated by Rutherford backscattering (RBS). The electrically active defects were investigated by deep level transient spectroscopy (DLTS). The crystal structure of the NCs nucleated near the deposition depth is identified by high-resolution TEM as hexagonal CrSi2. Energy filtered TEM shows that most of the Cr is localized in the three-dimensional (3D) NCs. RBS shows that the concentration of Cr is appropriate for the deposited quantity. In the 0.1 nm Cr sample most of the Cr is localized near the surface; in the 0.6 nm Cr sample the concentration increases at the depth of Cr deposition, while in the 1.5 nm Cr sample the excess Cr is localized near the deposition depth. DLTS Arrhenius plots give activation energies of the defects appropriate for Cr contamination, however these defects may be related to the CrSi2 NCs.

UR - http://www.scopus.com/inward/record.url?scp=38849176251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38849176251&partnerID=8YFLogxK

U2 - 10.1088/0953-8984/19/50/506204

DO - 10.1088/0953-8984/19/50/506204

M3 - Article

AN - SCOPUS:38849176251

VL - 19

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

SN - 0953-8984

IS - 50

M1 - 506204

ER -