Production of solid deuterium targets by ion implantation

J. Csikai, S. Szegedi, L. Oláh, S. M. Ibrahim, A. M. El-Megrab, N. I. Molla, M. M. Rahman, R. U. Miah, F. Habbani, I. Shaddad

Research output: Contribution to journalArticle

7 Citations (Scopus)


Solid metal, semiconductor and metallic glass samples were irradiated with deuteron atomic ions between 60 and 180 keV incident energies. Accumulation rates of deuterons in different targets were recorded by the detection of protons and neutrons via the 2H(d, p) and 2H(d, n) reactions. A simple analytical expression is given to describe the kinetics of the accumulation. The dependence of the reaction rate on the deuteron energy gives information on the concentration profile in addition to the neutron flux density spectra. A varying distortion of the implanted deuteron profiles by a change in the beam energy were also observed for different targets.

Original languageEnglish
Pages (from-to)75-80
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1
Publication statusPublished - Sep 21 1997



  • Accumulation kinetics
  • Charged particle reactions
  • Concentration profile
  • Ion implantation
  • Neutron spectrometry
  • Solid deuterium targets

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this