Production of semiconductor grade high-purity iron

Masahito Uchikoshi, Junichi Imaizumi, Hideka Shibuya, T. Kékesi, Kouji Mimura, Minoru Isshiki

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Semiconductor grade high-purity Fe will be required in practical use of β-FeSi2. However, high-purity Fe with more than 99.9999% in purity has not been produced commercially. Then, a process consisting of anion exchange in a HCl solution, hydrogen reduction and plasma arc melting has been developed for the production of high-purity Fe. All metallic impurities can be virtually removed from Fe by the two anion-exchange steps, in which some elements such as Cu and Mo are separated efficiently under reducing conditions by the addition of Fe powder at the 1st step, and the rest of impurities are surely separated under oxidizing conditions at the 2nd step. Non-metallic impurities such as oxygen, carbon and nitrogen also can be eliminated to very low levels by the hydrogen reduction and the hydrogen plasma arc melting steps.

Original languageEnglish
Pages (from-to)94-98
Number of pages5
JournalThin Solid Films
Volume461
Issue number1
DOIs
Publication statusPublished - Aug 2 2004

Fingerprint

Plasma arc melting
Hydrogen
grade
purity
Iron
Impurities
Semiconductor materials
iron
arc melting
Anions
Ion exchange
Negative ions
impurities
plasma jets
anions
Powders
hydrogen plasma
Nitrogen
hydrogen
Carbon

Keywords

  • Anion exchange
  • Ar-H plasma arc melting
  • Elution curves
  • Iron
  • Ultra-high purity

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Uchikoshi, M., Imaizumi, J., Shibuya, H., Kékesi, T., Mimura, K., & Isshiki, M. (2004). Production of semiconductor grade high-purity iron. Thin Solid Films, 461(1), 94-98. https://doi.org/10.1016/j.tsf.2004.02.076

Production of semiconductor grade high-purity iron. / Uchikoshi, Masahito; Imaizumi, Junichi; Shibuya, Hideka; Kékesi, T.; Mimura, Kouji; Isshiki, Minoru.

In: Thin Solid Films, Vol. 461, No. 1, 02.08.2004, p. 94-98.

Research output: Contribution to journalArticle

Uchikoshi, M, Imaizumi, J, Shibuya, H, Kékesi, T, Mimura, K & Isshiki, M 2004, 'Production of semiconductor grade high-purity iron', Thin Solid Films, vol. 461, no. 1, pp. 94-98. https://doi.org/10.1016/j.tsf.2004.02.076
Uchikoshi M, Imaizumi J, Shibuya H, Kékesi T, Mimura K, Isshiki M. Production of semiconductor grade high-purity iron. Thin Solid Films. 2004 Aug 2;461(1):94-98. https://doi.org/10.1016/j.tsf.2004.02.076
Uchikoshi, Masahito ; Imaizumi, Junichi ; Shibuya, Hideka ; Kékesi, T. ; Mimura, Kouji ; Isshiki, Minoru. / Production of semiconductor grade high-purity iron. In: Thin Solid Films. 2004 ; Vol. 461, No. 1. pp. 94-98.
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