Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate

S. S. Shenouda, G. Langer, G. L. Katona, L. Daróczi, A. Csík, D. Beke

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We report a process to obtain thin (5-20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni2Si thin films at low temperatures (180-200 °C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni2Si and grew by the motion of these interfaces, gradually consumes the Ni2Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.

Original languageEnglish
Pages (from-to)627-633
Number of pages7
JournalApplied Surface Science
Volume320
DOIs
Publication statusPublished - Nov 30 2014

Fingerprint

Solid state reactions
Grain boundaries
Substrates
Mass spectrometry
Annealing
Transmission electron microscopy
Thin films
Temperature
Chemical analysis

Keywords

  • Grain boundary diffusion
  • Nanostructures
  • Solid state reaction
  • Thin films

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

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title = "Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate",
abstract = "We report a process to obtain thin (5-20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni2Si thin films at low temperatures (180-200 °C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni2Si and grew by the motion of these interfaces, gradually consumes the Ni2Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.",
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T1 - Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(1 0 0) substrate

AU - Shenouda, S. S.

AU - Langer, G.

AU - Katona, G. L.

AU - Daróczi, L.

AU - Csík, A.

AU - Beke, D.

PY - 2014/11/30

Y1 - 2014/11/30

N2 - We report a process to obtain thin (5-20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni2Si thin films at low temperatures (180-200 °C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni2Si and grew by the motion of these interfaces, gradually consumes the Ni2Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.

AB - We report a process to obtain thin (5-20 nm thick) NiSi layers on Si(1 0 0) substrate from magnetron deposited Ni2Si thin films at low temperatures (180-200 °C). The time evolution of transformation was followed by means of Secondary Neutral Mass Spectrometry, transmission electron microscopy and resistance measurements. It is shown that there exist certain temperature-time and thickness-time windows inside of which the formation of NiSi takes place. The NiSi phase, formed along the grain boundaries of Ni2Si and grew by the motion of these interfaces, gradually consumes the Ni2Si phase. From the depth profiles of the first stage of the process, using the linear dependence of the average composition inside the film on the annealing time, the velocity of the grain boundary diffusion induced interface motion was also estimated. The normalized value of the resistance, proportional to the amount of the new phase, showed similar time evolution and yielded similar value for the interface velocity.

KW - Grain boundary diffusion

KW - Nanostructures

KW - Solid state reaction

KW - Thin films

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