Processes of phase formation and thermal stability of NiSi in nanoscale film Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) composition

Iu M. Makogon, D. Beke, O. P. Pavlova, S. I. Sidorenko, G. Beddies, A. Csík, T. I. Verbitska

Research output: Contribution to journalArticle

Abstract

The influence of Pt on the development of solid-state reactions in nanoscale Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) film compositions (NFC's) has been investigated by the methods of x-ray diffraction, secondary neutral mass spectrometry (SNMS), and resistivity measurements. The Pt and Ni layers are fabricated by magnetron layer-by-layer sputtering technique on monocrystalline Si(001) substrate at room temperature. The heat treatment of the samples is carried out in nitrogen atmosphere for 30 seconds within the temperature range of 450-900°C. In the as-deposited NFC's, no phase transformations are observed. During heat treatments, thermally activated solid-state reactions began by formation of intermediated silicide phases of Ni 2Si, Pt 2Si. With increasing the annealing temperature up to 600°C, independently on the Ptlayer thickness, in Ni/Pt(2; 6 nmJ/Si epit/Si(001) system, NiSi, PtSi and a solid solution silicide of Ni 1-xPt xSi are formed. A two-layer heterostructure is formed: complex polycrystalline silicide of Ni 1-xPt xSi is formed in the surface layer, below which the NiSi phase adjacent to the substrate is situated. Pt distribution in NiSi phase is uniform. Decomposition of Ni 1-xPt xSi silicide to NiSi and PtSi phases in Ni/Pt(2; 6 nm)/Si epit/Si(001) is observed after annealing above 850°C and 650°C. Introduction of the intermediate Pt layer increases the thermal stability of NiSi, as compared with Ni/Si(001) NFC's without Pt sublayer, by 100°C (up to 850°C), but, due to the heterophase structure, the electrical resistance still is relatively high (≅ 32 μΩ·cm) .

Original languageEnglish
Pages (from-to)1361-1373
Number of pages13
JournalMetallofizika i Noveishie Tekhnologii
Volume33
Issue number10
Publication statusPublished - Oct 2011

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Thermal Stability
Thermodynamic stability
thermal stability
Solid state reactions
Chemical analysis
Heat treatment
Annealing
Acoustic impedance
Heat Treatment
Substrates
heat treatment
Temperature
Mass spectrometry
Sputtering
Heterojunctions
Solid solutions
solid state
Nitrogen
Diffraction
Phase transitions

ASJC Scopus subject areas

  • Mathematics(all)
  • Metals and Alloys
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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Processes of phase formation and thermal stability of NiSi in nanoscale film Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) composition. / Makogon, Iu M.; Beke, D.; Pavlova, O. P.; Sidorenko, S. I.; Beddies, G.; Csík, A.; Verbitska, T. I.

In: Metallofizika i Noveishie Tekhnologii, Vol. 33, No. 10, 10.2011, p. 1361-1373.

Research output: Contribution to journalArticle

Makogon, Iu M. ; Beke, D. ; Pavlova, O. P. ; Sidorenko, S. I. ; Beddies, G. ; Csík, A. ; Verbitska, T. I. / Processes of phase formation and thermal stability of NiSi in nanoscale film Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) composition. In: Metallofizika i Noveishie Tekhnologii. 2011 ; Vol. 33, No. 10. pp. 1361-1373.
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abstract = "The influence of Pt on the development of solid-state reactions in nanoscale Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) film compositions (NFC's) has been investigated by the methods of x-ray diffraction, secondary neutral mass spectrometry (SNMS), and resistivity measurements. The Pt and Ni layers are fabricated by magnetron layer-by-layer sputtering technique on monocrystalline Si(001) substrate at room temperature. The heat treatment of the samples is carried out in nitrogen atmosphere for 30 seconds within the temperature range of 450-900°C. In the as-deposited NFC's, no phase transformations are observed. During heat treatments, thermally activated solid-state reactions began by formation of intermediated silicide phases of Ni 2Si, Pt 2Si. With increasing the annealing temperature up to 600°C, independently on the Ptlayer thickness, in Ni/Pt(2; 6 nmJ/Si epit/Si(001) system, NiSi, PtSi and a solid solution silicide of Ni 1-xPt xSi are formed. A two-layer heterostructure is formed: complex polycrystalline silicide of Ni 1-xPt xSi is formed in the surface layer, below which the NiSi phase adjacent to the substrate is situated. Pt distribution in NiSi phase is uniform. Decomposition of Ni 1-xPt xSi silicide to NiSi and PtSi phases in Ni/Pt(2; 6 nm)/Si epit/Si(001) is observed after annealing above 850°C and 650°C. Introduction of the intermediate Pt layer increases the thermal stability of NiSi, as compared with Ni/Si(001) NFC's without Pt sublayer, by 100°C (up to 850°C), but, due to the heterophase structure, the electrical resistance still is relatively high (≅ 32 μΩ·cm) .",
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T1 - Processes of phase formation and thermal stability of NiSi in nanoscale film Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) composition

AU - Makogon, Iu M.

AU - Beke, D.

AU - Pavlova, O. P.

AU - Sidorenko, S. I.

AU - Beddies, G.

AU - Csík, A.

AU - Verbitska, T. I.

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N2 - The influence of Pt on the development of solid-state reactions in nanoscale Ni(30 nm)/Pt(2; 6 nm)/Si epit(50 nm)/Si(001) film compositions (NFC's) has been investigated by the methods of x-ray diffraction, secondary neutral mass spectrometry (SNMS), and resistivity measurements. The Pt and Ni layers are fabricated by magnetron layer-by-layer sputtering technique on monocrystalline Si(001) substrate at room temperature. The heat treatment of the samples is carried out in nitrogen atmosphere for 30 seconds within the temperature range of 450-900°C. In the as-deposited NFC's, no phase transformations are observed. During heat treatments, thermally activated solid-state reactions began by formation of intermediated silicide phases of Ni 2Si, Pt 2Si. With increasing the annealing temperature up to 600°C, independently on the Ptlayer thickness, in Ni/Pt(2; 6 nmJ/Si epit/Si(001) system, NiSi, PtSi and a solid solution silicide of Ni 1-xPt xSi are formed. A two-layer heterostructure is formed: complex polycrystalline silicide of Ni 1-xPt xSi is formed in the surface layer, below which the NiSi phase adjacent to the substrate is situated. Pt distribution in NiSi phase is uniform. Decomposition of Ni 1-xPt xSi silicide to NiSi and PtSi phases in Ni/Pt(2; 6 nm)/Si epit/Si(001) is observed after annealing above 850°C and 650°C. Introduction of the intermediate Pt layer increases the thermal stability of NiSi, as compared with Ni/Si(001) NFC's without Pt sublayer, by 100°C (up to 850°C), but, due to the heterophase structure, the electrical resistance still is relatively high (≅ 32 μΩ·cm) .

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