Probing patterned wafer structures by means of grazing incidence x-ray fluorescence analysis

J. Osán, F. Reinhardt, B. Beckhoff, A. E. Pap, S. Török

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The reliable characterization of both nanoscaled structures and nanoparticles deposited on semiconductor surfaces using reference-free total-reflection X-ray fluorescence needs an accurate knowledge on the influence of surface structures on the X-ray standing wave field (XSW). Artificial structures (pads) of known composition with identical lateral dimensions and different heights in the 10 to 100 nm range were prepared. Their influence on the angular dependence of the XSW has been investigated employing monochromatized synchrotron radiation in the laboratory of the Physikalisch-Technische Bundesanstalt at BESSY II.

Original languageEnglish
Title of host publicationECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009
Pages441-451
Number of pages11
Edition3
DOIs
Publication statusPublished - Dec 1 2009
EventAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Publication series

NameECS Transactions
Number3
Volume25
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherAnalytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting
CountryAustria
CityVienna
Period10/4/0910/9/09

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Osán, J., Reinhardt, F., Beckhoff, B., Pap, A. E., & Török, S. (2009). Probing patterned wafer structures by means of grazing incidence x-ray fluorescence analysis. In ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 (3 ed., pp. 441-451). (ECS Transactions; Vol. 25, No. 3). https://doi.org/10.1149/1.3204435