Preparation of small silicon carbide quantum dots by wet chemical etching

D. Beke, Zs Szekrényes, I. Balogh, M. Veres, É Fazakas, L. Varga, Z. Czigány, K. Kamarás, A. Gali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Luminescence nanocrystals or quantum dots give grate potential for bio-analysis as well as optoelectronics. Here we report an effective and non-expensive fabrication method of silicon carbide nanocrystals, with diameter below 10 nm, based on electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents and particle size. Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide colloid solvents and also give opportunity to modify the surface easily for specific biological, medical or other application.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Pages19-24
Number of pages6
Volume1468
DOIs
Publication statusPublished - 2012
Event2012 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 9 2012Apr 13 2012

Other

Other2012 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/9/124/13/12

Fingerprint

Wet etching
Silicon carbide
silicon carbides
Nanocrystals
Semiconductor quantum dots
nanocrystals
quantum dots
etching
preparation
Colloids
Optoelectronic devices
colloids
Luminescence
Particle size
luminescence
Infrared radiation
Fabrication
fabrication
silicon carbide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Beke, D., Szekrényes, Z., Balogh, I., Veres, M., Fazakas, É., Varga, L., ... Gali, A. (2012). Preparation of small silicon carbide quantum dots by wet chemical etching. In Materials Research Society Symposium Proceedings (Vol. 1468, pp. 19-24) https://doi.org/10.1557/opl.2012.1506

Preparation of small silicon carbide quantum dots by wet chemical etching. / Beke, D.; Szekrényes, Zs; Balogh, I.; Veres, M.; Fazakas, É; Varga, L.; Czigány, Z.; Kamarás, K.; Gali, A.

Materials Research Society Symposium Proceedings. Vol. 1468 2012. p. 19-24.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Beke, D, Szekrényes, Z, Balogh, I, Veres, M, Fazakas, É, Varga, L, Czigány, Z, Kamarás, K & Gali, A 2012, Preparation of small silicon carbide quantum dots by wet chemical etching. in Materials Research Society Symposium Proceedings. vol. 1468, pp. 19-24, 2012 MRS Spring Meeting, San Francisco, CA, United States, 4/9/12. https://doi.org/10.1557/opl.2012.1506
Beke D, Szekrényes Z, Balogh I, Veres M, Fazakas É, Varga L et al. Preparation of small silicon carbide quantum dots by wet chemical etching. In Materials Research Society Symposium Proceedings. Vol. 1468. 2012. p. 19-24 https://doi.org/10.1557/opl.2012.1506
Beke, D. ; Szekrényes, Zs ; Balogh, I. ; Veres, M. ; Fazakas, É ; Varga, L. ; Czigány, Z. ; Kamarás, K. ; Gali, A. / Preparation of small silicon carbide quantum dots by wet chemical etching. Materials Research Society Symposium Proceedings. Vol. 1468 2012. pp. 19-24
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