Preparation of a Pt-GaAs Schottky contact by ion plating

G. Petó, T. Andersson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Pt has been evaporated on a GaAs surface via acceleration of Pt ions. By increasing the acceleration voltage, an improvement of Schottky contacts was observed.

Original languageEnglish
Pages (from-to)591-592
Number of pages2
JournalSolid State Electronics
Volume34
Issue number6
DOIs
Publication statusPublished - Jun 1991

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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