Preparation of a boron nitride single layer on a polycrystalline Rh surface

János Kiss, Károly Révész, Gábor Klivényi, Frigyes Solymosi

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5 Citations (Scopus)


The segregation of boron and its reactivity toward nitric oxide have been investigated by means of high-resolution Auger spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TDS). The segregation of boron from a Rh foil started from 700 K. Its presence altered the surface behaviors of Rh; the uptake of NO increased by about 30-37%. Whereas the dissociation of NO was about 3-10% on a clean, boron-free surface, the extent of dissociation (at saturation) at highest boron level was almost 98%. This feature strongly suggest a direct interaction between NO and boron on the surface. The presence of boron greatly stabilized the adsorbed nitrogen and oxygen formed in NO dissociation. Boron oxide (BO, B 2 O 2 ) sublimated from the surface below 1000 K. Clean, single BN layer formed on the surface close to a monolayer regime, presumable in nanomash structure.

Original languageEnglish
Pages (from-to)838-844
Number of pages7
JournalApplied Surface Science
Publication statusPublished - Jan 1 2013



  • Auger fine structures
  • Boron nitride
  • Formation of BN bond
  • NO dissociation on Rh
  • Segregation of boron

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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