Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates

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8 Citations (Scopus)

Abstract

Various metal oxide semiconductor nanoparticles (TiO2, ZnO, SnO2) were stabilized in the interlamellar space of clay minerals with a layered structure. In the first step, metal oxide/hydroxide nanosol particles were prepared by acidic hydrolysis, and the incorporation of the nanoparticles was next carried out between the layer silicates by a heterocoagulation method. Metal oxide semiconductor/layer silicate composites with large specific surface areas (asBET = 122-251 m2 g-1) were prepared with (TiO2) and without calcination at 400 °C (ZnO, SnO2). The structure of these composites was characterized by X-ray diffraction measurements and their photocatalytic properties were determined in aqueous solutions, using salicylic acid as a test molecule.

Original languageEnglish
Pages (from-to)27-33
Number of pages7
JournalProgress in Colloid and Polymer Science
Volume125
DOIs
Publication statusPublished - 2004

Fingerprint

Silicates
Photooxidation
photooxidation
metal oxide semiconductors
silicates
Metals
nanoparticles
preparation
composite materials
roasting
Nanoparticles
clays
hydroxides
metal oxides
Salicylic acid
hydrolysis
Salicylic Acid
minerals
Composite materials
aqueous solutions

Keywords

  • Clay minerals
  • Nanocomposites
  • Photocatalysis
  • Semiconductors
  • X-ray diffraction

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Chemistry (miscellaneous)
  • Colloid and Surface Chemistry
  • Polymers and Plastics

Cite this

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title = "Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates",
abstract = "Various metal oxide semiconductor nanoparticles (TiO2, ZnO, SnO2) were stabilized in the interlamellar space of clay minerals with a layered structure. In the first step, metal oxide/hydroxide nanosol particles were prepared by acidic hydrolysis, and the incorporation of the nanoparticles was next carried out between the layer silicates by a heterocoagulation method. Metal oxide semiconductor/layer silicate composites with large specific surface areas (asBET = 122-251 m2 g-1) were prepared with (TiO2) and without calcination at 400 °C (ZnO, SnO2). The structure of these composites was characterized by X-ray diffraction measurements and their photocatalytic properties were determined in aqueous solutions, using salicylic acid as a test molecule.",
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author = "L. K{\~o}r{\"o}si and K. Mogyor{\'o}si and R. Kun and J. N{\'e}meth and I. D{\'e}k{\'a}ny",
year = "2004",
doi = "10.1007/b13467",
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journal = "Progress in Colloid and Polymer Science",
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publisher = "Springer Verlag",

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TY - JOUR

T1 - Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates

AU - Kõrösi, L.

AU - Mogyorósi, K.

AU - Kun, R.

AU - Németh, J.

AU - Dékány, I.

PY - 2004

Y1 - 2004

N2 - Various metal oxide semiconductor nanoparticles (TiO2, ZnO, SnO2) were stabilized in the interlamellar space of clay minerals with a layered structure. In the first step, metal oxide/hydroxide nanosol particles were prepared by acidic hydrolysis, and the incorporation of the nanoparticles was next carried out between the layer silicates by a heterocoagulation method. Metal oxide semiconductor/layer silicate composites with large specific surface areas (asBET = 122-251 m2 g-1) were prepared with (TiO2) and without calcination at 400 °C (ZnO, SnO2). The structure of these composites was characterized by X-ray diffraction measurements and their photocatalytic properties were determined in aqueous solutions, using salicylic acid as a test molecule.

AB - Various metal oxide semiconductor nanoparticles (TiO2, ZnO, SnO2) were stabilized in the interlamellar space of clay minerals with a layered structure. In the first step, metal oxide/hydroxide nanosol particles were prepared by acidic hydrolysis, and the incorporation of the nanoparticles was next carried out between the layer silicates by a heterocoagulation method. Metal oxide semiconductor/layer silicate composites with large specific surface areas (asBET = 122-251 m2 g-1) were prepared with (TiO2) and without calcination at 400 °C (ZnO, SnO2). The structure of these composites was characterized by X-ray diffraction measurements and their photocatalytic properties were determined in aqueous solutions, using salicylic acid as a test molecule.

KW - Clay minerals

KW - Nanocomposites

KW - Photocatalysis

KW - Semiconductors

KW - X-ray diffraction

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