Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6

G. Kriza, G. Szeghy, I. Kézsmárki, G. Mihály

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The magnetoresistance of the quasi-one-dimensional organic conductor (TMTSF)2PF6 is studied for currents flowing parallel to the best conducting a and second best conducting b directions in magnetic fields perpendicular to the a-b plane under a hydrostatic pressure of 0.8 GPa. As a function of the magnetic field, the magnetoresistance follows a power law ΔR/R = (B/B0)3/2 both in the a and b directions. The a-b plane conductivity anisotropy is field independent. The scaling field B0, characterizing the strength of the magnetoresistance, follows an exponential temperature dependence B0∝exp(T/T0) with a field-independent characteristic temperature T0 = 10 K.

Original languageEnglish
Title of host publicationJournal De Physique. IV : JP
PublisherEditions de Physique
Volume9
Edition10
Publication statusPublished - 1999
EventProceedings of the 1999 International Workshop on ELectronic Crystals (ECRYS-99) - La Colle-sur-Loup, France
Duration: May 31 1999Jun 5 1999

Other

OtherProceedings of the 1999 International Workshop on ELectronic Crystals (ECRYS-99)
CityLa Colle-sur-Loup, France
Period5/31/996/5/99

Fingerprint

conduction
magnetic fields
hydrostatic pressure
conductors
scaling
conductivity
temperature dependence
anisotropy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kriza, G., Szeghy, G., Kézsmárki, I., & Mihály, G. (1999). Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6. In Journal De Physique. IV : JP (10 ed., Vol. 9). Editions de Physique.

Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6. / Kriza, G.; Szeghy, G.; Kézsmárki, I.; Mihály, G.

Journal De Physique. IV : JP. Vol. 9 10. ed. Editions de Physique, 1999.

Research output: Chapter in Book/Report/Conference proceedingChapter

Kriza, G, Szeghy, G, Kézsmárki, I & Mihály, G 1999, Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6. in Journal De Physique. IV : JP. 10 edn, vol. 9, Editions de Physique, Proceedings of the 1999 International Workshop on ELectronic Crystals (ECRYS-99), La Colle-sur-Loup, France, 5/31/99.
Kriza G, Szeghy G, Kézsmárki I, Mihály G. Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6. In Journal De Physique. IV : JP. 10 ed. Vol. 9. Editions de Physique. 1999
Kriza, G. ; Szeghy, G. ; Kézsmárki, I. ; Mihály, G. / Power law field dependence of the 2D magnetoresistance in (TMTSF)2PF6. Journal De Physique. IV : JP. Vol. 9 10. ed. Editions de Physique, 1999.
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AB - The magnetoresistance of the quasi-one-dimensional organic conductor (TMTSF)2PF6 is studied for currents flowing parallel to the best conducting a and second best conducting b directions in magnetic fields perpendicular to the a-b plane under a hydrostatic pressure of 0.8 GPa. As a function of the magnetic field, the magnetoresistance follows a power law ΔR/R = (B/B0)3/2 both in the a and b directions. The a-b plane conductivity anisotropy is field independent. The scaling field B0, characterizing the strength of the magnetoresistance, follows an exponential temperature dependence B0∝exp(T/T0) with a field-independent characteristic temperature T0 = 10 K.

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