Potential application of the AIGaAs/GaAs heterostructure photodiodes for laser-plasma diagnostics

L. Ryć, F. Riesz

Research output: Contribution to journalArticle

Abstract

The AIGaAs/GaAs heterostructure PIN photodiodes, grown by molecular beam epitaxy, are evaluated for the measurement of laser pulses and X-ray diagnostics of laser-induced plasmas. Excitation by the 820 nm laser pulses yields rise time of the detector less than 200 ps. The device is sensitive to 1.06 μm pulses from the Nd:YAG laser. Also α-particle spectra are measured and interpreted. The detector is able to operate at zero bias. Theoretical response to X-rays is calculated.

Original languageEnglish
Pages (from-to)647-656
Number of pages10
JournalNukleonika
Volume44
Issue number4
Publication statusPublished - Dec 1 1999

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Instrumentation
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Waste Management and Disposal

Fingerprint Dive into the research topics of 'Potential application of the AIGaAs/GaAs heterostructure photodiodes for laser-plasma diagnostics'. Together they form a unique fingerprint.

  • Cite this