Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire

L. Liszkay, P. M. Gordo, K. Havancsák, V. A. Skuratov, A. De Lima, Z. Kajcsos

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Swift ions create a defect profile penetrating deep into a solid compared to the sampling range of typical slow positron beams, which may consequently study a homogeneous zone of defected materials. To investigate the defect population created by energetic ions, we studied α-Al2O 3 single crystals irradiated with swift Kr ions by using conventional and pulsed positron beams. Samples irradiated with krypton at 245 MeV energy in a wide fluence range show nearly saturated positron trapping above 5×1010 ions cm-2 fluence, indicating the creation of monovacancies in high concentration. At 1×1014 ions cm -2 irradiation a 500 ps long lifetime component appears, showing the creation of larger voids. This threshold corresponds well to the onset of the overlap of the damage zones after Bi ion irradiation along the ion trajectories observed with microscopic methods.

Original languageEnglish
Pages (from-to)138-140
Number of pages3
JournalMaterials Science Forum
Volume445-446
Publication statusPublished - 2004

Fingerprint

Aluminum Oxide
Doppler effect
Positrons
Ion bombardment
ion irradiation
Sapphire
positrons
sapphire
Ions
life (durability)
Defects
defects
ions
fluence
Krypton
krypton
voids
sampling
trapping
Trajectories

Keywords

  • AlO
  • Kr Irradiation
  • Positron Lifetime
  • Pulsed Positron Beam
  • Sapphire
  • Vacancies

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Positron lifetime and Doppler broadening study of defects created by swift ion irradiation in sapphire. / Liszkay, L.; Gordo, P. M.; Havancsák, K.; Skuratov, V. A.; De Lima, A.; Kajcsos, Z.

In: Materials Science Forum, Vol. 445-446, 2004, p. 138-140.

Research output: Contribution to journalArticle

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AU - De Lima, A.

AU - Kajcsos, Z.

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