Positron annihilation studies in amorphous silicon nitride

P. M. Gordo, M. Duarte Naia, C. Lopes Gil, A. P. De Lima, G. Lavareda, C. Nunes De Carvalho, A. Amaral, Z. Kajcsos

Research output: Contribution to journalArticle

Abstract

Results of positron annihilation studies on amorphous silicon nitride thin films (a-SiNx:H) are presented. The chemical structure of the film, determined by FTIR measurements, is related to open type defects present. Samples with the lowest S parameter value exhibit the highest density and possess the best electrical performance.

Original languageEnglish
Pages (from-to)90-92
Number of pages3
JournalMaterials Science Forum
Volume445-446
Publication statusPublished - 2004

Fingerprint

Positron annihilation
Scattering parameters
positron annihilation
Amorphous silicon
Silicon nitride
silicon nitrides
amorphous silicon
Thin films
Defects
defects
thin films
silicon nitride

Keywords

  • a-SiN:H
  • Defects
  • FTIR
  • Positron Beam

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gordo, P. M., Naia, M. D., Gil, C. L., De Lima, A. P., Lavareda, G., De Carvalho, C. N., ... Kajcsos, Z. (2004). Positron annihilation studies in amorphous silicon nitride. Materials Science Forum, 445-446, 90-92.

Positron annihilation studies in amorphous silicon nitride. / Gordo, P. M.; Naia, M. Duarte; Gil, C. Lopes; De Lima, A. P.; Lavareda, G.; De Carvalho, C. Nunes; Amaral, A.; Kajcsos, Z.

In: Materials Science Forum, Vol. 445-446, 2004, p. 90-92.

Research output: Contribution to journalArticle

Gordo, PM, Naia, MD, Gil, CL, De Lima, AP, Lavareda, G, De Carvalho, CN, Amaral, A & Kajcsos, Z 2004, 'Positron annihilation studies in amorphous silicon nitride', Materials Science Forum, vol. 445-446, pp. 90-92.
Gordo PM, Naia MD, Gil CL, De Lima AP, Lavareda G, De Carvalho CN et al. Positron annihilation studies in amorphous silicon nitride. Materials Science Forum. 2004;445-446:90-92.
Gordo, P. M. ; Naia, M. Duarte ; Gil, C. Lopes ; De Lima, A. P. ; Lavareda, G. ; De Carvalho, C. Nunes ; Amaral, A. ; Kajcsos, Z. / Positron annihilation studies in amorphous silicon nitride. In: Materials Science Forum. 2004 ; Vol. 445-446. pp. 90-92.
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