Positron annihilation and constant photocurrent method measurements on a-Si

H films: A comparative approach to defect identification

P. M. Gordo, M. F. Ferreira Marques, C. Lopes Gil, A. P. de Lima, G. Lavareda, C. Nunes de Carvalho, A. Amaral, Z. Kajcsos

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Defect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters.

Original languageEnglish
Pages (from-to)220-223
Number of pages4
JournalRadiation Physics and Chemistry
Volume76
Issue number2
DOIs
Publication statusPublished - Feb 2007

Fingerprint

positron annihilation
photocurrents
defects
spectroscopy
amorphous silicon
solar cells
energy levels
thin films
energy

Keywords

  • a-Si:H
  • Constant photocurrent method
  • Defects
  • Density of states
  • Doppler broadening
  • Variable-energy positron annihilation

ASJC Scopus subject areas

  • Radiation

Cite this

Positron annihilation and constant photocurrent method measurements on a-Si : H films: A comparative approach to defect identification. / Gordo, P. M.; Ferreira Marques, M. F.; Lopes Gil, C.; de Lima, A. P.; Lavareda, G.; Nunes de Carvalho, C.; Amaral, A.; Kajcsos, Z.

In: Radiation Physics and Chemistry, Vol. 76, No. 2, 02.2007, p. 220-223.

Research output: Contribution to journalArticle

Gordo, P. M. ; Ferreira Marques, M. F. ; Lopes Gil, C. ; de Lima, A. P. ; Lavareda, G. ; Nunes de Carvalho, C. ; Amaral, A. ; Kajcsos, Z. / Positron annihilation and constant photocurrent method measurements on a-Si : H films: A comparative approach to defect identification. In: Radiation Physics and Chemistry. 2007 ; Vol. 76, No. 2. pp. 220-223.
@article{ef34e683e3094549ae9299a41fb389c5,
title = "Positron annihilation and constant photocurrent method measurements on a-Si: H films: A comparative approach to defect identification",
abstract = "Defect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters.",
keywords = "a-Si:H, Constant photocurrent method, Defects, Density of states, Doppler broadening, Variable-energy positron annihilation",
author = "Gordo, {P. M.} and {Ferreira Marques}, {M. F.} and {Lopes Gil}, C. and {de Lima}, {A. P.} and G. Lavareda and {Nunes de Carvalho}, C. and A. Amaral and Z. Kajcsos",
year = "2007",
month = "2",
doi = "10.1016/j.radphyschem.2006.03.040",
language = "English",
volume = "76",
pages = "220--223",
journal = "Radiation Physics and Chemistry",
issn = "0969-806X",
publisher = "Elsevier Limited",
number = "2",

}

TY - JOUR

T1 - Positron annihilation and constant photocurrent method measurements on a-Si

T2 - H films: A comparative approach to defect identification

AU - Gordo, P. M.

AU - Ferreira Marques, M. F.

AU - Lopes Gil, C.

AU - de Lima, A. P.

AU - Lavareda, G.

AU - Nunes de Carvalho, C.

AU - Amaral, A.

AU - Kajcsos, Z.

PY - 2007/2

Y1 - 2007/2

N2 - Defect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters.

AB - Defect structure of hydrogenated amorphous silicon thin-films was studied by positron annihilation spectroscopy (PAS), whereas the density of states below the Fermi level was measured by constant photocurrent method (CPM). Divacancies and large vacancy clusters were identified as the main defects present in these films, with relative concentrations strongly dependent on the rf-power. Correlation between PAS, CPM results and I(V) characteristics of solar cells suggests the creation of energy levels above the Fermi energy, not observable by CPM, related to large vacancy clusters.

KW - a-Si:H

KW - Constant photocurrent method

KW - Defects

KW - Density of states

KW - Doppler broadening

KW - Variable-energy positron annihilation

UR - http://www.scopus.com/inward/record.url?scp=33751195513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751195513&partnerID=8YFLogxK

U2 - 10.1016/j.radphyschem.2006.03.040

DO - 10.1016/j.radphyschem.2006.03.040

M3 - Article

VL - 76

SP - 220

EP - 223

JO - Radiation Physics and Chemistry

JF - Radiation Physics and Chemistry

SN - 0969-806X

IS - 2

ER -