Porosity and thickness characterization of porous Si and oxidized porous Si layers - An ultraviolet-visible-mid infrared ellipsometry study

Balint Fodor, Emil Agocs, Benjamin Bardet, Thomas Defforge, Frederic Cayrel, Daniel Alquier, M. Fried, Gael Gautier, P. Petrik

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

This paper suggests the evaluation of morphological parameters of porous silicon layers (PSL) using spectroscopic ellipsometry from UV to mid-infrared optical range. PSL were prepared by electrochemical etching of monocrystalline silicon wafers in hydrofluoric acid-based electrolyte. Measuring with an optical and an infrared ellipsometer with a wide spectral range permits an accurate characterization of PSL properties from the top surface to the bottom of the layer with thicknesses from several hundred nanometers up to a few tens of micrometers. Several different optical models for ellipsometric evaluations were developed to determine the thickness, the average porosity, the in-depth porosity gradient, the oxidation level and the surface roughness of the PSL. Porosity was modeled with multiple effective medium layers by varying ratio of crystalline silicon, void and oxidized silicon wherever needed. Thin PSL (

Original languageEnglish
Pages (from-to)112-120
Number of pages9
JournalMicroporous and Mesoporous Materials
Volume227
DOIs
Publication statusPublished - Jun 1 2016

Fingerprint

Porous silicon
Ellipsometry
ellipsometry
Porosity
porous silicon
Infrared radiation
porosity
Silicon
Hydrofluoric Acid
Monocrystalline silicon
Electrochemical etching
Hydrofluoric acid
Spectroscopic ellipsometry
silicon
Silicon wafers
Electrolytes
ellipsometers
evaluation
hydrofluoric acid
Surface roughness

Keywords

  • Electrochemical etching
  • Infrared ellipsometry
  • Measurement of porosity
  • Oxidation
  • Porous silicon layer

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Chemistry(all)
  • Condensed Matter Physics

Cite this

Porosity and thickness characterization of porous Si and oxidized porous Si layers - An ultraviolet-visible-mid infrared ellipsometry study. / Fodor, Balint; Agocs, Emil; Bardet, Benjamin; Defforge, Thomas; Cayrel, Frederic; Alquier, Daniel; Fried, M.; Gautier, Gael; Petrik, P.

In: Microporous and Mesoporous Materials, Vol. 227, 01.06.2016, p. 112-120.

Research output: Contribution to journalArticle

Fodor, Balint ; Agocs, Emil ; Bardet, Benjamin ; Defforge, Thomas ; Cayrel, Frederic ; Alquier, Daniel ; Fried, M. ; Gautier, Gael ; Petrik, P. / Porosity and thickness characterization of porous Si and oxidized porous Si layers - An ultraviolet-visible-mid infrared ellipsometry study. In: Microporous and Mesoporous Materials. 2016 ; Vol. 227. pp. 112-120.
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