Pore propagation directions in P+ porous silicon

É Vázsonyi, G. Battistig, Z. E. Horváth, M. Fried, G. Kádár, F. Pászti, J. L. Cantin, D. Vanhaeren, L. Stalmans, J. Poortmans

Research output: Contribution to journalArticle

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Abstract

A comparative study is presented on the pore propagation directions of porous silicon layers (PSL) formed on p+-type substrates of different orientations. PSLs were formed on plain (0 0 1) and (1 1 1) silicon wafers as well as on structured (0 0 1) wafers containing facets of various orientations. During anodization, regular pores follow the 〈0 0 1〉 direction on the (0 0 1) planes. While on the (1 1 1) planes fewer regular pores develop and seemingly propagate closely to the 〈1 1 1〉 direction. These results indicate that the pores propagate perpendicular to the surface i.e. along the field lines when the surface orientation is either (0 0 1) or (1 1 1). When the silicon surface provided (1 1 0) orientation, or its position is in between the (0 0 1) and (1 1 1) planes then the pores do not propagate perpendicular to the surface but along the 〈0 0 1〉 direction. All the phenomena exhibited might be explained by presuming that during formation, the pores propagate along the 〈1 0 0〉 directions, and that those 〈1 0 0〉 directions are preferred which are closely to the field lines. In PSLs formed on (0 0 1) surfaces the field lines and the 〈0 0 1〉 crystallographic direction are coincident. However, in the (1 1 1) oriented wafer where three equally probable 〈1 0 0〉 directions exist around the field lines, more irregular structure of PSLs will develop.

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalJournal of Porous Materials
Volume7
Issue number1
Publication statusPublished - 2000

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Porous silicon
porous silicon
porosity
propagation
wafers
Silicon wafers
Direction compound
silicon
Silicon
plains
flat surfaces
Substrates

ASJC Scopus subject areas

  • Chemistry (miscellaneous)
  • Physical and Theoretical Chemistry
  • Materials Science(all)
  • Catalysis

Cite this

Pore propagation directions in P+ porous silicon. / Vázsonyi, É; Battistig, G.; Horváth, Z. E.; Fried, M.; Kádár, G.; Pászti, F.; Cantin, J. L.; Vanhaeren, D.; Stalmans, L.; Poortmans, J.

In: Journal of Porous Materials, Vol. 7, No. 1, 2000, p. 57-61.

Research output: Contribution to journalArticle

Vázsonyi, É, Battistig, G, Horváth, ZE, Fried, M, Kádár, G, Pászti, F, Cantin, JL, Vanhaeren, D, Stalmans, L & Poortmans, J 2000, 'Pore propagation directions in P+ porous silicon', Journal of Porous Materials, vol. 7, no. 1, pp. 57-61.
Vázsonyi, É ; Battistig, G. ; Horváth, Z. E. ; Fried, M. ; Kádár, G. ; Pászti, F. ; Cantin, J. L. ; Vanhaeren, D. ; Stalmans, L. ; Poortmans, J. / Pore propagation directions in P+ porous silicon. In: Journal of Porous Materials. 2000 ; Vol. 7, No. 1. pp. 57-61.
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