Large polarization memory effects of photoluminescence were observed in a-C:H films, its degree decreased from 40 % on the high energy side to zero on the low energy side of the luminescence band. Radiative recombination of strongly localized electron-hole pairs is suggested as being the mechanism responsible for the polarization memory of luminescence.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry