Polarization memory of photoluminescence in a-C:H film

M. Koós, I. Pócsik, L. Tóth

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Large polarization memory effects of photoluminescence were observed in a-C:H films, its degree decreased from 40 % on the high energy side to zero on the low energy side of the luminescence band. Radiative recombination of strongly localized electron-hole pairs is suggested as being the mechanism responsible for the polarization memory of luminescence.

Original languageEnglish
Pages (from-to)1151-1154
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 2
DOIs
Publication statusPublished - Dec 2 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Polarization memory of photoluminescence in a-C:H film'. Together they form a unique fingerprint.

  • Cite this