Polarity dependent carbon enrichment on 6H-SiC{0 0 0 1} due to low energy ion bombardment

G. Battistig, J. L. Lábár, S. Gurbán, A. Sulyok, M. Menyhard, I. C. Vickridge, E. Szilagyi, J. Malherbe, Q. Odendaal

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10 Citations (Scopus)

Abstract

Ion sputtering induced surface composition changes by applying various ions (He+, Ne+, Ar+, Xe+) in the energy range of 0.2-1.5 keV, was measured by AES on the polar faces of 6H-SiC{0 0 0 1}. Carbon enrichment was observed on both faces, and it was different if Ne+, Ar+, Xe+ ion sputtering was applied with ion energy lower than 0.4-0.8 keV (depending on projectile); no different enrichment was found for He+ ion bombardment at any energy (in this range). Thus C/Si ratio measured by AES after low energy ion (e.g. Xe+) bombardment can be used to identify polarity of the surface.

Original languageEnglish
Pages (from-to)L133-L136
JournalSurface Science
Volume526
Issue number1-2
DOIs
Publication statusPublished - Feb 20 2003

Keywords

  • Ion bombardment
  • Silicon carbide
  • Sputtering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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