Polarity dependent carbon enrichment on 6H-SiC{0 0 0 1} due to low energy ion bombardment

G. Battistig, J. Lábár, S. Gurbán, A. Sulyok, M. Menyhárd, I. C. Vickridge, E. Szilágyi, J. Malherbe, Q. Odendaal

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ion sputtering induced surface composition changes by applying various ions (He+, Ne+, Ar+, Xe+) in the energy range of 0.2-1.5 keV, was measured by AES on the polar faces of 6H-SiC{0 0 0 1}. Carbon enrichment was observed on both faces, and it was different if Ne+, Ar+, Xe+ ion sputtering was applied with ion energy lower than 0.4-0.8 keV (depending on projectile); no different enrichment was found for He+ ion bombardment at any energy (in this range). Thus C/Si ratio measured by AES after low energy ion (e.g. Xe+) bombardment can be used to identify polarity of the surface.

Original languageEnglish
JournalSurface Science
Volume526
Issue number1-2
DOIs
Publication statusPublished - Feb 20 2003

Fingerprint

Ion bombardment
bombardment
polarity
Carbon
Ions
carbon
ions
Sputtering
energy
sputtering
Projectiles
Surface structure
projectiles

Keywords

  • Ion bombardment
  • Silicon carbide
  • Sputtering

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Polarity dependent carbon enrichment on 6H-SiC{0 0 0 1} due to low energy ion bombardment. / Battistig, G.; Lábár, J.; Gurbán, S.; Sulyok, A.; Menyhárd, M.; Vickridge, I. C.; Szilágyi, E.; Malherbe, J.; Odendaal, Q.

In: Surface Science, Vol. 526, No. 1-2, 20.02.2003.

Research output: Contribution to journalArticle

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AU - Battistig, G.

AU - Lábár, J.

AU - Gurbán, S.

AU - Sulyok, A.

AU - Menyhárd, M.

AU - Vickridge, I. C.

AU - Szilágyi, E.

AU - Malherbe, J.

AU - Odendaal, Q.

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AB - Ion sputtering induced surface composition changes by applying various ions (He+, Ne+, Ar+, Xe+) in the energy range of 0.2-1.5 keV, was measured by AES on the polar faces of 6H-SiC{0 0 0 1}. Carbon enrichment was observed on both faces, and it was different if Ne+, Ar+, Xe+ ion sputtering was applied with ion energy lower than 0.4-0.8 keV (depending on projectile); no different enrichment was found for He+ ion bombardment at any energy (in this range). Thus C/Si ratio measured by AES after low energy ion (e.g. Xe+) bombardment can be used to identify polarity of the surface.

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