Point defects in SiC

Ádám Gali, Michel Bockstedte, Ngyen Tien Son, Erik Janzén

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Tight control of defects is pivotal for semiconductor technology. However, even the basic defects are not entirely understood in silicon carbide. In the recent years significant advances have been reached in the identification of defects by combining the experimental tools like electron paramagnetic resonance and photoluminescence with ab initio calculations. We summarize these results and their consequences in silicon carbide based technology. We show recent methodological developments making possible the accurate calculation of absorption and emission signals of defects.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices
Pages65-76
Number of pages12
Publication statusPublished - Nov 17 2008
EventSilicon Carbide 2008 - Materials, Processing and Devices - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1069
ISSN (Print)0272-9172

Other

OtherSilicon Carbide 2008 - Materials, Processing and Devices
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gali, Á., Bockstedte, M., Son, N. T., & Janzén, E. (2008). Point defects in SiC. In Materials Research Society Symposium Proceedings - Silicon Carbide 2008 - Materials, Processing and Devices (pp. 65-76). (Materials Research Society Symposium Proceedings; Vol. 1069).