Point defects generated by direct-wafer bonding of silicon

L. Dózsa, B. Szentpáli, D. Pasquariello, K. Hjort

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3 Citations (Scopus)


High-purity float zone (FZ) silicon p- and n-type wafers were directly bonded hydrophobically at 700°C and 1050°C. Electrical I-V and capacitance-voltage (C-V) characterization was performed on p-n junctions of 2-mm square chips cut out from properly bonded areas of the wafers. The point defects were investigated by Deep Level Transient Spectroscopy (DLTS). As expected, annealing at 700°C resulted in high void density, while at 1050°C void-free bonded structures were formed. The I-V characteristics were dominated by recombination at the bonded interface and by the resistance of the n-type wafer. The point defects identified by DLTS are divacancy, vacancy-phosphor, and vacancy-oxygen complexes. These defects explain qualitatively the observed characteristics of the samples.

Original languageEnglish
Article number156
Pages (from-to)113-118
Number of pages6
JournalJournal of Electronic Materials
Issue number2
Publication statusPublished - Jan 1 2002



  • Point defects
  • Si
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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