Point defects and their aggregation in silicon carbide

A. Gali, T. Hornos, M. Bockstedte, Th Frauenheim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials
EditorsN. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina, A. Horsfall
PublisherTrans Tech Publications Ltd
Pages439-444
Number of pages6
ISBN (Print)0878494421, 9780878494422, 9780878494422
DOIs
Publication statusPublished - 2007
Event6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006 - Newcastle upon Tyne, United Kingdom
Duration: Sep 3 2006Sep 7 2007

Publication series

NameMaterials Science Forum
Volume556-557
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference6th European Conference on Silicon Carbide and Related Materials, ECSCRM 2006
CountryUnited Kingdom
CityNewcastle upon Tyne
Period9/3/069/7/07

Keywords

  • Ab initio hyperfme signature
  • Interstitials
  • Vacancies

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Gali, A., Hornos, T., Bockstedte, M., & Frauenheim, T. (2007). Point defects and their aggregation in silicon carbide. In N. Wright, C. M. Johnson, K. Vassilevski, I. Nikitina, & A. Horsfall (Eds.), Silicon Carbide and Related Materials 2006 - ECSCRM 20006 - Proceedings of the 6th European Conference on Silicon Carbide and Related Materials (pp. 439-444). (Materials Science Forum; Vol. 556-557). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-442-1.439