Point defects and their aggregation in silicon carbide

A. Gali, T. Hornos, M. Bockstedte, Th Frauenheim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The existence of point defects is one of the key problems in SiC technology. Combined experimental and theoretical investigations can be successful in identification of point defects. We report the identification of a basic intrinsic defect in p-type SiC. In addition, we predict the existence of interstitial-related electrically active defects which may be detected by experimental tools.

Original languageEnglish
Pages (from-to)439-444
Number of pages6
JournalMaterials Science Forum
Volume556-557
Publication statusPublished - 2007

Fingerprint

Point defects
Silicon carbide
silicon carbides
point defects
Agglomeration
Defects
defects
interstitials
silicon carbide

Keywords

  • Ab initio hyperfme signature
  • Interstitials
  • Vacancies

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Gali, A., Hornos, T., Bockstedte, M., & Frauenheim, T. (2007). Point defects and their aggregation in silicon carbide. Materials Science Forum, 556-557, 439-444.

Point defects and their aggregation in silicon carbide. / Gali, A.; Hornos, T.; Bockstedte, M.; Frauenheim, Th.

In: Materials Science Forum, Vol. 556-557, 2007, p. 439-444.

Research output: Contribution to journalArticle

Gali, A, Hornos, T, Bockstedte, M & Frauenheim, T 2007, 'Point defects and their aggregation in silicon carbide', Materials Science Forum, vol. 556-557, pp. 439-444.
Gali A, Hornos T, Bockstedte M, Frauenheim T. Point defects and their aggregation in silicon carbide. Materials Science Forum. 2007;556-557:439-444.
Gali, A. ; Hornos, T. ; Bockstedte, M. ; Frauenheim, Th. / Point defects and their aggregation in silicon carbide. In: Materials Science Forum. 2007 ; Vol. 556-557. pp. 439-444.
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