Plasma immersion ion implantation of nitrogen into porous silicon layers

A. Manuaba, I. Pintér, E. Szilágyi, G. Battistig, C. Ortega, A. Grosman, G. Amsel

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Nitrogen plasma immersion ion implantation (PIII) (with bias voltage, pressure and duration up to 1000 V, 1 mbar and 240 seconds, respectively) was applied to modify the composition of porous silicon layers prepared on p and p+ type single crystal Si substrates. The amounts of nitrogen and other impurities like O and C were determined using the 14N(d,α)12C, 14N(α,α)14N, 16O(d,p1)17O* and 12C(d,p)13C nuclear reactions. For a 30 sec immersion, the obtained nitrogen amount in the 2 μm thick columnar-type porous layers increased with plasma pressure and bias voltage. To introduce nitrogen into sponge-like porous layer, nitrogen PIII with bias voltage of 1000 V and 1 mbar pressure was applied. As measured by Rutherford Backscattering Spectrometry (RBS), the introduced nitrogen is always in the near surface region and its amount reaches a saturation value after ∼30 sec treatment of direct PIII. An example is shown for remote PIII (1000 V, 1 mbar and 180 sec) that is able to introduce nitrogen into the whole porous layer.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalMaterials Science Forum
Volume248-249
Publication statusPublished - 1997

Fingerprint

Porous silicon
porous silicon
Ion implantation
submerging
ion implantation
Nitrogen
Plasmas
nitrogen
Bias voltage
Nitrogen plasma
nitrogen plasma
electric potential
plasma pressure
Nuclear reactions
Rutherford backscattering spectroscopy
nuclear reactions
Spectrometry
backscattering
Single crystals
Impurities

Keywords

  • Ion Beam Analysis
  • Ion Implantation
  • Plasma Immersion
  • Porous Silicon

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Manuaba, A., Pintér, I., Szilágyi, E., Battistig, G., Ortega, C., Grosman, A., & Amsel, G. (1997). Plasma immersion ion implantation of nitrogen into porous silicon layers. Materials Science Forum, 248-249, 233-236.

Plasma immersion ion implantation of nitrogen into porous silicon layers. / Manuaba, A.; Pintér, I.; Szilágyi, E.; Battistig, G.; Ortega, C.; Grosman, A.; Amsel, G.

In: Materials Science Forum, Vol. 248-249, 1997, p. 233-236.

Research output: Contribution to journalArticle

Manuaba, A, Pintér, I, Szilágyi, E, Battistig, G, Ortega, C, Grosman, A & Amsel, G 1997, 'Plasma immersion ion implantation of nitrogen into porous silicon layers', Materials Science Forum, vol. 248-249, pp. 233-236.
Manuaba, A. ; Pintér, I. ; Szilágyi, E. ; Battistig, G. ; Ortega, C. ; Grosman, A. ; Amsel, G. / Plasma immersion ion implantation of nitrogen into porous silicon layers. In: Materials Science Forum. 1997 ; Vol. 248-249. pp. 233-236.
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AU - Pintér, I.

AU - Szilágyi, E.

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AU - Grosman, A.

AU - Amsel, G.

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AB - Nitrogen plasma immersion ion implantation (PIII) (with bias voltage, pressure and duration up to 1000 V, 1 mbar and 240 seconds, respectively) was applied to modify the composition of porous silicon layers prepared on p and p+ type single crystal Si substrates. The amounts of nitrogen and other impurities like O and C were determined using the 14N(d,α)12C, 14N(α,α)14N, 16O(d,p1)17O* and 12C(d,p)13C nuclear reactions. For a 30 sec immersion, the obtained nitrogen amount in the 2 μm thick columnar-type porous layers increased with plasma pressure and bias voltage. To introduce nitrogen into sponge-like porous layer, nitrogen PIII with bias voltage of 1000 V and 1 mbar pressure was applied. As measured by Rutherford Backscattering Spectrometry (RBS), the introduced nitrogen is always in the near surface region and its amount reaches a saturation value after ∼30 sec treatment of direct PIII. An example is shown for remote PIII (1000 V, 1 mbar and 180 sec) that is able to introduce nitrogen into the whole porous layer.

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