Pinning of charge density waves by irradiation induced defects in orthorhombic TaS3

G. Mihály, L. Mihály, H. Mutka

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Effects of electron irradiation induced damage on dc conductivity, threshold field and complex dielectric constant at 9 GHz are investigated in a wide temperature range. Whereas the single particle gap in the low temperature phase is not influenced by irradiation, transport properties associated with collective excitation of charge density waves (CDW) are sensitive to the presence of new pinning centres. The results are discussed in the framework of the semiclassical model of Grüner, Zawadowski and Chaikin. The pinning frequency determined from the threshold field agrees well with that of calculated from the complex dielectric constant.

Original languageEnglish
Pages (from-to)1009-1012
Number of pages4
JournalSolid State Communications
Volume49
Issue number11
DOIs
Publication statusPublished - Mar 1984

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Pinning of charge density waves by irradiation induced defects in orthorhombic TaS<sub>3</sub>'. Together they form a unique fingerprint.

  • Cite this