Physico-chemical investigation of Pt-Si system with SIMS and AES

K. Josepovits, I. Biczo

Research output: Contribution to journalArticle

Abstract

Because of its great practical importance, the silicide-Si contacts, in particular the Pt-silicide-Si contacts are the subject of rapidly developing research. Platinum layers were deposited onto the surface of a Si substrate then treated at temperatures between 350-360°C, in different gas atmospheres (O2, H2, forming gas) to form platinum-silicide. At low temperature unstable Pt2Si is formed, then after reacting with the total amount of Pt, the formation of PtSi begins. In this work the effect of heat treatment in H2 and O2 atmospheres on the formation of platinum-silicide has been studied. The authors have investigated the formed structure of these layers by SIMS and Auger methods. According to the Auger measurements there is only a single homogeneous Pt-Si layer on the silicon substrate heat treated at 450°C for 45 min in H2 atmosphere. The SIMS spectra suggest the presence of Pt-Si bonds. The Auger and SIMS measurements show that two sharply distinguishable layers can be found on the substrates heat treated at 500°C for 45 min in O2 atmosphere.

Original languageEnglish
Pages (from-to)231
Number of pages1
JournalVacuum
Volume40
Issue number1-2
Publication statusPublished - 1990

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Secondary ion mass spectrometry
Platinum
secondary ion mass spectrometry
atmospheres
platinum
Substrates
Gases
Silicon
heat
Heat treatment
gases
Temperature
heat treatment
silicon
Hot Temperature
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Physico-chemical investigation of Pt-Si system with SIMS and AES. / Josepovits, K.; Biczo, I.

In: Vacuum, Vol. 40, No. 1-2, 1990, p. 231.

Research output: Contribution to journalArticle

Josepovits, K. ; Biczo, I. / Physico-chemical investigation of Pt-Si system with SIMS and AES. In: Vacuum. 1990 ; Vol. 40, No. 1-2. pp. 231.
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