Photorefractive damage resistance threshold in stoichiometric LiNbO 3: Zr crystals

L. Kovács, Zsuzsanna Szaller, K. Lengyel, A. Péter, Ivett Hajdara, Gábor Mandula, L. Pálfalvi, J. Hebling

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Several optical methods including ultraviolet absorption, infrared absorption of the hydroxyl ions, Raman spectroscopy, and the Z-scan method have been used to determine the damage resistance threshold in 0-0.72 mol. % Zr-containing, flux-grown, nearly stoichiometric LiNbO3 single crystals. All spectroscopical methods used indicate that samples containing at least ̃0.085 mol: % Zr in the crystal are above the threshold while Z-scan data locate the photorefractive damage threshold between 0.085 and 0.314 mol. % Zr.

Original languageEnglish
Pages (from-to)2861-2864
Number of pages4
JournalOptics Letters
Volume38
Issue number15
DOIs
Publication statusPublished - Aug 1 2013

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damage
thresholds
ultraviolet absorption
yield point
infrared absorption
crystals
Raman spectroscopy
optics
single crystals
ions

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Photorefractive damage resistance threshold in stoichiometric LiNbO 3 : Zr crystals. / Kovács, L.; Szaller, Zsuzsanna; Lengyel, K.; Péter, A.; Hajdara, Ivett; Mandula, Gábor; Pálfalvi, L.; Hebling, J.

In: Optics Letters, Vol. 38, No. 15, 01.08.2013, p. 2861-2864.

Research output: Contribution to journalArticle

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