Photon assisted implantation (PAI)

L. P. Biró, J. Gyulai, H. Ryssel, L. Frey, T. Kormány, N. M. Tuan, Z. E. Horváth

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Abstract

Experiments on photon assisted (PA) implantation are reported for boron implanted in (100) n-type Si. The light of an Ar-ion laser (488 and 514 nm) was used to shift the Fermi level at the surface to create a driving force on charged point defects. As a result, an altered defect structure and a junction depth reduction up to 15-20% was found. Low implantation energy and short thermal annealing promote the reduction of junction depth by PA implantation conditions.

Original languageEnglish
Pages (from-to)607-611
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume80-81
Issue numberPART 1
DOIs
Publication statusPublished - Jun 3 1993

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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