Photoluminescence transients in the amorphous GexSe1 - x system

M. Koós, I. Pócsik, István Kósa Somogyi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Transient effects have been observed in the photoluminescene (PL) of the GexSe1 - x system after keeping the fatigued sample in the dark at a low temperature. The intensity of the transient signal increases with the dark time. This effect suggests that band gap excitation inhibits the recombination of the PL centre.

Original languageEnglish
Pages (from-to)469-471
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume90
Issue number1-3
DOIs
Publication statusPublished - 1987

Fingerprint

Photoluminescence
photoluminescence
Energy gap
excitation
Temperature

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Photoluminescence transients in the amorphous GexSe1 - x system. / Koós, M.; Pócsik, I.; Somogyi, István Kósa.

In: Journal of Non-Crystalline Solids, Vol. 90, No. 1-3, 1987, p. 469-471.

Research output: Contribution to journalArticle

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