Photoluminescence transients in the amorphous GexSe1 - x system

Margit Koós, István Pócsik, István Kósa Somogyi

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Abstract

Transient effects have been observed in the photoluminescene (PL) of the GexSe1 - x system after keeping the fatigued sample in the dark at a low temperature. The intensity of the transient signal increases with the dark time. This effect suggests that band gap excitation inhibits the recombination of the PL centre.

Original languageEnglish
Pages (from-to)469-471
Number of pages3
JournalJournal of Non-Crystalline Solids
Volume90
Issue number1-3
DOIs
Publication statusPublished - Feb 1987

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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